Fully inkjet‐printed metal‐oxide thin‐film transistors on plastic

Abstract

1 Introduction The low-cost arguments in support of printed electronics are strengthened by the potential for large-area, high-speed, roll-to-roll processing with high materials utilization in contrast to conventional processing techniques (i.e., photolithography) for applications utilizing low-end (i.e., lower performance) electronics [1]. To this end, there are several suitable printing-based manufacturing methods available (e.g., inkjet, gravure, screen-printing, aerojet, flexography, offset), each offering unique advantages and disadvantages. Roll-to-roll processing requires the use of materials processed at temperatures compatible with rollable/flexible substrates [2]. So far, organic materials have been successfully integrated into fully printed complex active devices and circuits (e.g., diodes, transistors, inverters, ring-oscillators, displays, radio frequency identification tags, and sensors) onto flexible substrates [3], likely due to the relatively low processing temperatures (<150 8C) required to optimize their performance and the maturity and flexibility of organic materials available. However, since organic materials are known to exhibit low field-effect mobility and poor air stability [4], there is a compelling reason to develop similar capability for higher performance inorganic materials such as transparent conductive oxides (TCOs), particularly for applications seeking to combine transparency, conductivity, and flexibility into novel technologies. In addition to their improved transparency, higher conductivity, improved stability, and higher

Metal oxide semiconductor thin-film transistors for flexible electronics

“…Due to their high T G % 360 C, PI substrates with thickness ranging from %3 to 50lm are widely used. 83,145,191,193,[197][198][199][220][221][222][223] Polyarylate (PAR) foils have also been employed, 192,200,224,225 given their good temperature stability (T G % 330 C), combined with a colorless transparency in the visible range. If the semiconductor deposition is performed at lower temperatures ( 150 C), also PES foils (T G around 200 C) can be utilized.…”

“…However, due to the patterned deposition, the ink drying conditions need to be specially controlled, in order to avoid irregularities and effects such as the coffee ring formation. 198,239,248 (V) In the process of spray pyrolysis, a fine spray of the precursor solution is created (using an air-blast or an ultrasonic nozzle) and directed onto a heated substrate. 244 Given a sufficiently high substrate temperature, the precursor immediately undergoes the conversion reaction and forms the final film material.…”

Solution Processed Metal Oxide High‐κ Dielectrics for Emerging Transistors and Circuits

“…This was also the first report demonstrating feasibility of bar coating technique for the fabrication of high quality uniform oxide dielectric with extraordinary dielectric performance. Besides these noteworthy achievements, many other studies have investigated solution processed high κ oxide dielectrics using printing techniques …”

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

“…Many recent developments have been made on fully solution‐processed, or fully inkjet‐printed oxide TFTs for low‐temperature . The fully solution‐process or inkjet printing process, which has been carried out in one process, has great advantages in terms of cost reduction.…”

“…The other material, fluorine‐doped tin oxide (FTO) has also been adopted for the source/drain/gate electrodes of ZnO TFTs . FTO electrodes were deposited at 30 °C using inkjet printing and annealed at 300 °C in an ambient furnace.…”