2007 IEEE Symposium on VLSI Technology 2007
DOI: 10.1109/vlsit.2007.4339688
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Fully Integrated 56 nm DRAM Technology for 1 Gb DRAM

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Cited by 13 publications
(12 citation statements)
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“…is the driving force that underlines most design and technology choices [22]. Studies show that commodity DRAM uses conventional planar transistors [34] or mixed devices (bitcell transistor for NMOS and a planar transistor for PMOS [22]) for these supportive circuits. High voltage driving transistors, required to drive poly wordline P-Sub.…”
Section: Transistor Model and Scalingmentioning
confidence: 99%
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“…is the driving force that underlines most design and technology choices [22]. Studies show that commodity DRAM uses conventional planar transistors [34] or mixed devices (bitcell transistor for NMOS and a planar transistor for PMOS [22]) for these supportive circuits. High voltage driving transistors, required to drive poly wordline P-Sub.…”
Section: Transistor Model and Scalingmentioning
confidence: 99%
“…Below 60 nm process, we assume that the trench depth would remain as it is on the 60 nm process. For the gate material, we assume it is tungsten silicide from 75 nm and tungsten from 55 nm [34]. These work functions are 4.82 eV and 5.12 eV in each case [37,38].…”
Section: Gate Transistor Model and Scalingmentioning
confidence: 99%
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“…Although the proposed buffer can have the gate-drain voltage of MP0 above V DD when receiving a low data, the transistor does not enter the accelerated gate-oxide breakdown condition [4] because MP0 whose drain-source voltage is V DD stays off. (For an off-state pMOS, the voltage at which gate-oxide stress occurs is known to be over twice the nominal operating voltage [5].) So, MP0 does not suffer from the gate-oxide reliability problem.…”
Section: Proposed Mixed-voltage I/o Buffermentioning
confidence: 99%
“…We showed that if we could build a binary sensor by modifying standard memory chip technology, the pixel size would be about 50 nm [6]. This value is far below the diffraction limit of the lens.…”
Section: Introductionmentioning
confidence: 96%