Fully Integrated Gate Drive Supply Around Power Switches

Mitova, Radoslava; Crébier, Jean-Christophe; Aubard, Laurent; Schaeffer, Christian

doi:10.1109/tpel.2005.846541

Cited by 32 publications

(12 citation statements)

References 7 publications

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“…In fact, the monolithic integration of Fig. 6(b) GDPS circuit within the MOSFET die has already been demonstrated in [20]. Further discussion on these integrable GDPS circuits can be found in [21]- [23].…”

Section: A the Switching Cellmentioning

confidence: 95%

Switching-Cell Arrays—An Alternative Design Approach in Power Conversion

Busquets‐Monge

Caballero²

2019

IEEE Trans. Ind. Electron.

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Section: A the Switching Cellmentioning

confidence: 95%

Switching-Cell Arrays—An Alternative Design Approach in Power Conversion

Busquets‐Monge

Caballero²

2019

IEEE Trans. Ind. Electron.

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“…In order to obtain an autonomous operation of the IGBT, an internal power supply [5] is required to provide the gate charge even when the IGBT is in the ON state. This supply circuit consists of a capacitor in series with a diode (D) and an NMOS depletion mode transistor (M1).…”

Section: Architecturementioning

confidence: 99%

New self-controlled and self-protected IGBT based integrated switch

Capy

Laur

Breil

et al. 2009

2009 21st International Symposium on Power Semiconductor Devices &Amp; IC's

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In this paper, we present the realization of a new self-controlled integrated power switch dedicated to selfswitching mode power converters. To achieve this function, an original topology based on an IGBT is proposed. Its operating modes are analyzed using 2D physical simulation. To realize this new power switch, a technological process compatible with the IGBT process and with 3D capacitors realization is proposed.

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“…To prevent a high impedance state of the IGBT gate, the short-circuit between gate and cathode must be held with the help of a specific turn-off holding cell made up of M4, ZD and M3. In order to obtain an autonomous turn-on of the IGBT, an internal power supply [5] is required to provide the gate charge even when the IGBT is in the ON state. This supply circuit consists of a capacitor in series with a diode (D) and an NMOS depletion mode transistor (M1).…”

Section: Fig 1 I(v) Characteristic Of Self-switched Devicementioning

confidence: 99%

Self-switching circuit based on IGBT suited for monolithic integration

Capy¹,

Laur²,

Breil³

et al. 2009

Electron. Lett.

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A new self-controlled and self-protected integrated power switch dedicated to self-switching mode power converters is presented. To achieve this function, an original topology based on an IGBT is proposed and its operation is analysed by 2D physical simulation. The topology validates the functionality, the switching phases are instantaneous and the switch is compliant with technical specifications. These results motivate the realisation of this device, offering promising potential for a wide range of applications.

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Fully Integrated Gate Drive Supply Around Power Switches

Cited by 32 publications

References 7 publications

Switching-Cell Arrays—An Alternative Design Approach in Power Conversion

Switching-Cell Arrays—An Alternative Design Approach in Power Conversion

New self-controlled and self-protected IGBT based integrated switch

Self-switching circuit based on IGBT suited for monolithic integration

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