Fully integrated power management unit (PMU) using NMOS Low Dropout regulators

Coulot, T.; Souvignet, Thomas; Trochut, Severin; Lauga, E.; Fournier, Jean‐Michel; Rouat, E.; Allard, Bruno; Hasbani, Frédéric

doi:10.1109/eurocon.2013.6625168

Cited by 7 publications

(3 citation statements)

References 11 publications

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“…Since the output node is having a low resistance, it is not convenient to make it as a dominant pole. This forces the pole at the input of pass transistor to be a dominant one [23]- [25]. Resistor R3 and capacitor Cc are used for this purpose.…”

Section: Design Of Nmos Based Regulatormentioning

confidence: 99%

Comparative Analysis of PMOS and NMOS based Linear Regulators with Similar Power Profiles

Guruprasad

2024

jes

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In his article, a comparative analysis of PMOS and NMOS based linear voltage regulators is presented. An output power of 18 mW is considered in the both cases. In PMOS based regulator, the output voltage is 1.6 V and output current is 11.25 mA, whereas in NMOS, they are 1 V and 18 mA respectively. Firstly, a conventional linear regulator is designed with PMOS as pass element and its stability and various performance parameters are analyzed. SPICE simulation is carried out to measure parameters and they are tabulated for the comparison. Similarly, another linear regulator is designed where pass element is a NMOS transistor. After the analysis of stability and performance parameters, SPICE simulation is conducted. The performance parameters of both regulators are compared and it is found that NMOS regulator exhibits better performance but low dropout feature of PMOS regulator makes it suitable for low power applications.

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Section: Design Of Nmos Based Regulatormentioning

confidence: 99%

Comparative Analysis of PMOS and NMOS based Linear Regulators with Similar Power Profiles

Guruprasad

2024

jes

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“…Many studies have contributed to enhancing PSR [4,5,6,7,8,9,10,11,12]. Some techniques can effectively improve the PSR of LDO, such as using simple RC filtering at the output of LDO [13,14], cascading two LDOs [15,16], using NMOS transistors as power transistor and gate voltage is controlled using charge pump technology [17,18,19]. The main idea of these techniques is to increase the PSR of the LDO by adding more isolation before input and output along the current path of the power transistor.…”

Section: Introductionmentioning

confidence: 99%

A low power LDO with high PSR over a wide frequency range based on an impedance attenuation buffer

Pei,

Sun,

et al. 2024

IEICE Electron. Express

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A low-dropout voltage linear regulator with low quiescent current and high PSR over a wide frequency range is designed to meet the application requirements of high-performance CMOS image sensor. An embedded impedance attenuation buffer is proposed to embed the feedforward path into the buffer, reduce the quiescent current and improve PSR in a wide frequency range. The simulation result shows that LDO achieves a PSR better than 60dB up to 10MHz for load current up to 100mA. The LDO achieves 65dB PSR at 1MHz and 90dB PSR at 1KHz. LDO consumes a quiescent current of 36uA with a bandgap reference circuit included.

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“…In this Chapter, a step-down switched-capacitor DC-DC converter with no-load voltage conversion ratio of M VCR,NL = 2/3 is proposed. An NMOS-LDO [110] is integrated with the SC converter in both charging and discharging phases to…”

Section: Introductionmentioning

confidence: 99%

Switched-capacitor power converters for battery-powered and self-powered applications

Xiao¹

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Liter for motivating me into this interesting field of IC design and for his guidance and encouragement throughout my Ph. D journey. It was his support and advices that helped me overcome numerous obstacles that I faced during my research. Next, I am grateful to the Singapore Economy Development Board (EDB) and Broadcom Limited for awarding me with the Joint-Industry Programme II Scholarship (JIP-II). Without the financial support, it would have been impossible for me to study at Nanyang Technological University. Special thanks to the analog design group in Broadcom Limited for the valuable discussions and advices in the annual meetings. I am also grateful to NTU-A*STAR Silicon Technologies Centre of Excellence for providing chip fabrication funding support under the program grant no. 11235150003. I would like to thank my teammates, also good friends, Dr. Kok Chiang Liang, Dr.

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Fully integrated power management unit (PMU) using NMOS Low Dropout regulators

Cited by 7 publications

References 11 publications

Comparative Analysis of PMOS and NMOS based Linear Regulators with Similar Power Profiles

Comparative Analysis of PMOS and NMOS based Linear Regulators with Similar Power Profiles

A low power LDO with high PSR over a wide frequency range based on an impedance attenuation buffer

Switched-capacitor power converters for battery-powered and self-powered applications

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