Fully Photoswitchable Phototransistor Memory Comprising Perovskite Quantum Dot-Based Hybrid Nanocomposites as a Photoresponsive Floating Gate

Abstract

Tremendous research efforts have been dedicated into the field of photoresponsive nonvolatile memory devices owing to their advantages of fast transmitting speed, low latency, and power-saving property that are suitable for replacing current electrical-driven electronics. However, the reported memory devices still rely on the assistance of gate bias to program them, and a real fully photoswitchable transistor memory is still rare. Herein, we report a phototransistor memory device comprising polymer/perovskite quantum dot (QD) hybrid nanocomposites as a photoresponsive floating gate. The perovskite QDs offer an effective discreteness with an excellent photoresponse that are suitable for photogate application. In addition, a series of ultraviolet (UV)-sensitive insulating polymer hosts were designed to investigate the effect of UV light on the memory behavior. We found that a fully photoswitchable memory device was fulfilled by using the independent and sequential photoexcitation between a UV-sensitive polymer host and a visible light-sensitive QD photogates, which produced decent photoresponse, memory switchability, and highly stable memory retention with a memory ratio of 10 4 over 10 4 s. This study not only unraveled the mystery in the fully photoswitchable functionality of nonvolatile memory but also enlightened their potential in the next-generation electronics for light-fidelity application.

2D van der Waals Heterostructure with Tellurene Floating-Gate for Wide Range and Multi-Bit Optoelectronic Memory

“…Among the 2D material-based optoelectronic devices, our ReS 2 /hBN/2D Te vdWh memory demonstrated an ultrahigh on/off ratio of 10 6 in the visible region (532 nm), which is three orders of magnitude higher than those of other FG materials (such as WS 2 , MoS 2 , graphene, and P2VP) under the same laser wavelength. Additionally, the device was programmable with laser wavelengths from the VIS to NIR regions, which was the widest operating range compared to previous studies. − It should be noted that, owing to the distinct small band gap of 2D Te, our vdWh memory is also promising by functioning over an ultrawide range from the ultraviolet to mid-infrared regions.…”

Tailoring Wavelength-Adaptive Visual Neuroplasticity Transitions of Synaptic Transistors Comprising Rod-Coil Block Copolymers for Dual-Mode Photoswitchable Learning/Forgetting Neural Functions

“…Table summarizes the synaptic performance of the proposed photosynapse with its counterparts in fully light-controlled artificial synapses and memory devices. Overall, the proposed BCP-based photosynapses have decent PPF indices, which can compete with their inorganic counterparts under ultralow optical pulse widths. ,,,– This is one of the few works that can exhibit long-term memory behaviors with fully light-controlled modes. ,, Notably, this is the first work to demonstrate fully light-controlled short- and long-term memory based on organic material systems. These results underline the feasibility of employing the BCP photosynapses in real-time artificial visual devices and broaden their horizons for state-of-the-art high-speed image processing/memory systems utilizing all-optical operations.…”

“…41,43,44,62−65 This is one of the few works that can exhibit long-term memory behaviors with fully light-controlled modes. 42,66,67 Notably, this is the first work to demonstrate fully light-controlled short-and long-term memory based on organic material systems. These results underline the feasibility of employing the BCP photosynapses in real-time artificial visual devices and broaden their horizons for state-of-the-art high-speed image processing/memory systems utilizing all-optical operations.…”

Photogating enhanced photodetectors dominated by rubrene nanodots modified SnS2 films

“…This photogain mechanism inside optoelectronic devices means that once one type of photogenerated charges was trapped by localized states with a certain spatial distribution, these unmovable carriers could act as a local gate voltage to regulate the conductance of device channel. Importantly, the photogating behavior could be easily implemented by artificial designed low-dimensional hybrid structures, especially the hybrid 0D/2D heterostructures [24][25][26][27]. Besides, following the rapid progress of information technology, the organic crystalline semiconductors are widely used in preparation of modern electronic and optoelectronic devices [28,29].…”