Fully quantitative characterization of CMOS–MEMS polysilicon/titanium thermopile infrared sensors

Chen, Chung-Nan

doi:10.1016/j.snb.2011.11.058

Cited by 23 publications

(10 citation statements)

References 26 publications

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“…Visible light, IR, and microwave radiation transfer heat radiatively. Due to the association between radiation and heat, bj‐PGs are largely used to exploit the SE in thermopiles useful for IR radiation detection, power measurements, thermal imaging, temperature sensors, and energy‐harvesting devices . In these applications, a large variety of sources, from common broadband sources to lasers, are employed to activate the bj‐PGs .…”

Section: Introductionmentioning

confidence: 99%

Infrared power generation in an insulated compartment

et al. 2013

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The mechanism that activates a bi-junction power generator under the effects of heat is the Seebeck effect, that is, the production of voltage difference DV(t) is directly proportional to the temperature difference DT(t) between the ''hot'' and ''cold'' junctions of the device. This phenomenon is well established and is known as thermoelectric power generation. Here, it is shown that, instead, the causal and linear relationship between DV(t) and DT(t) is lost when continuous broadband infrared (CB-IR) radiation illuminates a bi-junction power generator in an insulated compartment. The observed phenomenon is IR power generation. Heat transfer calculations fail in explaining the experimental trends. The interaction between CB-IR radiation and the charge carriers in the bi-junction power generator might play a role in the DV(t) production, depending upon the geometry of the experimental setup. The longitudinal propagation of collective oscillations, for example, polaritons, in the plates protecting the ''hot'' and ''cold'' junctions of the bi-junction power generator could explain the DV(t) production and the characteristic time constants. The findings should be considered in the design, fabrication, and improvement of thermopiles, power meters, and IR energy-harvesting devices.

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Section: Introductionmentioning

confidence: 99%

Infrared power generation in an insulated compartment

et al. 2013

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“…Infrared spectrometers that can detect specific wavelengths in the infrared (IR) region are required for various applications, such as in automobiles, military, medical treatment, and analysis, and there is an increased demand for improvements in spectroscopic technology. Therefore, in recent years, various studies have focused on IR detection sensors using IR spectrometry [ 1 , 2 , 3 ]. Among them, some studies focus on the tunable Fabry-Perot interferometer (TFPI) to finely control the wavelength range while using optical filters [ 4 , 5 , 6 ].…”

Section: Introductionmentioning

confidence: 99%

Tunable Fabry-Perot Interferometer Designed for Far-Infrared Wavelength by Utilizing Electromagnetic Force

Jung

Lee

Kim

et al. 2018

Sensors

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A tunable Fabry-Perot interferometer (TFPI)-type wavelength filter designed for the long-wavelength infrared (LWIR) region is fabricated using micro electro mechanical systems (MEMS) technology and the novel polydimethylsiloxane (PDMS) micro patterning technique. The structure of the proposed infrared sensor consists of a Fabry-Perot interferometer (FPI)-based optical filter and infrared (IR) detector. An amorphous Si-based thermal IR detector is located under the FPI-based optical filter to detect the IR-rays filtered by the FPI. The filtered IR wavelength is selected according to the air etalon gap between reflectors, which is defined by the thickness of the patterned PDMS. The 8 μm-thick PDMS pattern is fabricated on a 3 nm-thick Al layer used as a reflector. The air etalon gap is changed using the electromagnetic force between the permanent magnet and solenoid. The measured PDMS gap height is about 2 μm, ranging from 8 μm to 6 μm, with driving current varying from 0 mA to 600 mA, resulting in a tunable wavelength range of 4 μm. The 3-dB bandwidth (full width at half maximum, FWHM) of the proposed filter is 1.5 nm, while the Free Spectral Range (FSR) is 8 μm. Experimental results show that the proposed TFPI can detect a specific wavelength at the long LWIR region.

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“…Titanium thin films have been used as sensing electrodes, buffer, or adhesive layers. The advantages of titanium thin films are good electric conductivity, extraordinary chemical resistivity, thermal stability, high hardness, high melting point, and lower number of crystallographic imperfections [1][2][3][4][5]. Crystallographic orientation of titanium thin films has to be controlled during the deposition process to obtain specific properties (e.g., mechanical, chemical) suitable for an eventually required application [6,7].…”

Section: Introductionmentioning

confidence: 99%

Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide

et al. 2015

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We propose the ion-beam sputtering deposition providing Ti thin films of desired crystallographic orientation and smooth surface morphology not obtainable with conventional deposition techniques such as magnetron sputtering and vacuum evaporation. The sputtering was provided by argon broad ion beams generated by a Kaufman ion-beam source. In order to achieve the optimal properties of thin film, we investigated the Ti thin films deposited on an amorphous thermal silicon dioxide using X-ray diffraction, and atomic force microscopy. We have optimized deposition conditions for growing of thin films with the only (001) preferential orientation of film crystallites, and achieved ultra-low surface roughness of 0.55 nm. The deposited films have been found to be stable upon annealing up to 300°C which is often essential for envisaging subsequent deposition of piezoelectric AlN thin films.

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Fully quantitative characterization of CMOS–MEMS polysilicon/titanium thermopile infrared sensors

Cited by 23 publications

References 26 publications

Infrared power generation in an insulated compartment

Infrared power generation in an insulated compartment

Tunable Fabry-Perot Interferometer Designed for Far-Infrared Wavelength by Utilizing Electromagnetic Force

Preparation of (001) preferentially oriented titanium thin films by ion-beam sputtering deposition on thermal silicon dioxide

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