Fully Self-Aligned Via Integration for Interconnect Scaling Beyond 3nm Node

Chen, H.P.; Wu, Yiliang; Huang, H. Y.; Tsai, Chien‐Hsiung; Lee, S.K.; Lee, C.C.; Wei, T.H.; Yao, Huizhen; Wang, Y.C.; Liao, Chan; Chang, H.K.; Lu, Chung-Jen; Shue, W.S.; Cao, Min

doi:10.1109/iedm19574.2021.9720600

Cited by 16 publications

(22 citation statements)

References 10 publications

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“…As a consequence, the conventional top–down fabrication processes based on extreme ultraviolet lithography and etching techniques severely suffer from misalignment (edge placement error) and more intricate fabrication processes, which has become a critical bottleneck hindering the evolution of semiconductor technology. − In the face of rigorous challenges, area-selective atomic layer deposition (AS-ALD) has been proposed as an enabling technology for novel bottom-up and self-aligned fabrication. ,, AS-ALD is capable of selectively depositing ultrathin films on the growth area (GA) and not upon the non-GA (NGA), which possesses a high potential to reduce the lithography and etching steps in advanced semiconductor technology nodes. For example, the fully self-aligned via (FSAV) structure has been regarded as one of the important applications of AS-ALD. , The FSAV technique can enhance the reliability of integrated circuits by increasing the distance between the neighboring metal vias. − Conventionally, the FSAV topography was fabricated by lithography and recess etching processes, which results in damage to metal surfaces . On the contrary, AS-ALD is a self-aligned technique to form the FSAV structure without roughening the metal surfaces. , Therefore, the AS-ALD technology, which enables the FSAV fabrication by depositing dielectric thin films on the dielectric GA and not upon the metal NGA with high selectivity, is urged in advanced semiconductor technology nodes.…”

Section: Introductionmentioning

confidence: 99%

“…For example, the fully self-aligned via (FSAV) structure has been regarded as one of the important applications of AS-ALD. , The FSAV technique can enhance the reliability of integrated circuits by increasing the distance between the neighboring metal vias. − Conventionally, the FSAV topography was fabricated by lithography and recess etching processes, which results in damage to metal surfaces . On the contrary, AS-ALD is a self-aligned technique to form the FSAV structure without roughening the metal surfaces. , Therefore, the AS-ALD technology, which enables the FSAV fabrication by depositing dielectric thin films on the dielectric GA and not upon the metal NGA with high selectivity, is urged in advanced semiconductor technology nodes.…”

Section: Introductionmentioning

confidence: 99%

“…9−11 Conventionally, the FSAV topography was fabricated by lithography and recess etching processes, which results in damage to metal surfaces. 9 On the contrary, AS-ALD is a self-aligned technique to form the FSAV structure without roughening the metal surfaces. 8,9 Therefore, the AS-ALD technology, which enables the FSAV fabrication by depositing dielectric thin films on the dielectric GA and not upon the metal NGA with high selectivity, is urged in advanced semiconductor technology nodes.…”

Section: ■ Introductionmentioning

confidence: 99%

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Inhibitor-Free Area-Selective Atomic Layer Deposition with Feature Size Down to Nearly 10 nm

Chou

Chuu

et al. 2023

Chem. Mater.

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Area-selective atomic layer deposition (AS-ALD) is gaining widespread attention due to the urgent demand for a self-aligned and “bottom-to-top” fabrication process in advanced semiconductor technology. In this study, an innovative concept of the “atomic layer nucleation engineering (ALNE)” and “surface recovery (SR)” techniques is proposed to realize AS-ALD of Al2O3 between metal (W) and dielectric (SiO2) without the involvement of inhibitors. The ALNE treatment is utilized to selectively remove the weakly adsorbed precursors on the metal surface, and the SR process can eliminate the oxidized layer on the metal surface caused by the exposure of oxidants in the ALD process. Accordingly, the AS-ALD with ∼100% selectivity is achieved up to 100 ALD cycles with a considerable difference in an Al2O3 thickness of ∼11.2 nm between the SiO2 and W surfaces. The accomplishment of AS-ALD is also demonstrated on the SiO2/W patterned substrates with the feature size scaling from 75 μm to ∼10 nm. Hence, the inhibitor-free AS-ALD implemented by the ALNE and SR techniques is a critical breakthrough for the further progress of Moore’s law.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

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Inhibitor-Free Area-Selective Atomic Layer Deposition with Feature Size Down to Nearly 10 nm

Chou

Chuu

et al. 2023

Chem. Mater.

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“…9 HfO 2 and Al 2 O 3 can also act as diffusion barriers for Cu interconnects as demonstrated by Majumder et al 10 In a recent study by Chen et al, TiO 2 is reported to be a strong candidate for dielectric-on-dielectric CVD to achieve self-aligned via integration with alkanethiol self-assembly monolayers (SAMs) for selective deposition. 11 CVD process normally involves one or more gas-phase precursors reacting near the substrate surface. 12 For thermal CVD, the focus of the present study, gas-phase precursors physisorb onto the substrate surface and potentially chemisorb with a reactive site such as a hydroxyl group (OH − ).…”

Section: ■ Introductionmentioning

confidence: 99%

“…Previously, TiO 2 HfO 2 , and Al 2 O 3 were demonstrated to be possible spacers or etch stop layers in self-aligned patterning . HfO 2 and Al 2 O 3 can also act as diffusion barriers for Cu interconnects as demonstrated by Majumder et al In a recent study by Chen et al, TiO 2 is reported to be a strong candidate for dielectric-on-dielectric CVD to achieve self-aligned via integration with alkanethiol self-assembly monolayers (SAMs) for selective deposition …”

Section: Introductionmentioning

confidence: 99%

Selective Pulsed Chemical Vapor Deposition of Water-Free TiO₂/Al₂O₃ and HfO₂/Al₂O₃ Nanolaminates on Si and SiO₂ in Preference to SiCOH

Huang

Cho

Zhang

et al. 2022

ACS Appl. Mater. Interfaces

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Highly selective and smooth TiO 2 /Al 2 O 3 and HfO 2 /Al 2 O 3 nanolaminates were deposited by water-free pulsed chemical vapor deposition (CVD) at 300 °C using titanium isopropoxide (Ti(O i Pr) 4 ) and hafnium tertbutoxide (Hf(O t Bu) 4 ) with trimethylaluminum (TMA). TMA was found to be the key factor for enhancing nucleation selectivity on SiO 2 or Si versus SiCOH (hydrophobic, nonporous low k dielectric). With precise dosing of TMA, selective nucleation of TiO 2 /Al 2 O 3 and HfO 2 /Al 2 O 3 nanolaminates was achieved and smoother films were formed with higher selectivity compared to single precursor TiO 2 and HfO 2 CVD. The selectivity of TiO 2 /Al 2 O 3 nanolaminate deposition increased from 34 to 44 (deposition on Si vs SiCOH), while RMS roughness of the film of Si decreased from 2.8 to 0.38 nm. The selectivity of HfO 2 /Al 2 O 3 deposition increased from 14 to 73, while the RMS roughness of HfO 2 /Al 2 O 3 on Si was maintained at a similar value of 0.78 nm. Deposition of water-free pulsed CVD TiO 2 /Al 2 O 3 and HfO 2 /Al 2 O 3 nanolaminates was conducted on a Cu/SiCOH patterned sample to study their nanoselectivity. Transmission electron microscopy images of the Cu/ SiCOH patterned sample demonstrated that highly selective and smooth TiO 2 /Al 2 O 3 and HfO 2 /Al 2 O 3 nanolaminates can be formed on a nanoscale pattern.

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High‐Throughput Area‐Selective Spatial Atomic Layer Deposition of SiO₂ with Interleaved Small Molecule Inhibitors and Integrated Back‐Etch Correction for Low Defectivity

2023

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A first-of-its-kind area-selective deposition process for SiO 2 is developed consisting of film deposition with interleaved exposures to small molecule inhibitors (SMIs) and back-etch correction steps, within the same spatial atomic layer deposition (ALD) tool. The synergy of these aspects results in selective SiO 2 deposition up to ˜23 nm with high selectivity and throughput, with SiO 2 growth area and ZnO nongrowth area. The selectivity is corroborated by both X-ray photoelectron spectroscopy (XPS) and low-energy ion scattering spectroscopy (LEIS). The selectivity conferred by two different SMIs, ethylbutyric acid, and pivalic acid has been compared experimentally and theoretically. Density Functional Theory (DFT) calculations reveal that selective surface functionalization using both SMIs is predominantly controlled thermodynamically, while the better selectivity achieved when using trimethylacetic acid can be explained by its higher packing density compared to ethylbutyric acid. By employing the trimethylacetic acid as SMI on other starting surfaces (Ta 2 O 5 , ZrO 2 , etc.) and probing the selectivity, a broader use of carboxylic acid inhibitors for different substrates is demonstrated. It is believed that the current results highlight the subtleties in SMI properties such as size, geometry, and packing, as well as interleaved back-etch steps, which are key in developing ever more effective strategies for highly selective deposition processes.

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Fully Self-Aligned Via Integration for Interconnect Scaling Beyond 3nm Node

Cited by 16 publications

References 10 publications

Inhibitor-Free Area-Selective Atomic Layer Deposition with Feature Size Down to Nearly 10 nm

Inhibitor-Free Area-Selective Atomic Layer Deposition with Feature Size Down to Nearly 10 nm

Selective Pulsed Chemical Vapor Deposition of Water-Free TiO₂/Al₂O₃ and HfO₂/Al₂O₃ Nanolaminates on Si and SiO₂ in Preference to SiCOH

High‐Throughput Area‐Selective Spatial Atomic Layer Deposition of SiO₂ with Interleaved Small Molecule Inhibitors and Integrated Back‐Etch Correction for Low Defectivity

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Fully Self-Aligned Via Integration for Interconnect Scaling Beyond 3nm Node

Cited by 16 publications

References 10 publications

Inhibitor-Free Area-Selective Atomic Layer Deposition with Feature Size Down to Nearly 10 nm

Inhibitor-Free Area-Selective Atomic Layer Deposition with Feature Size Down to Nearly 10 nm

Selective Pulsed Chemical Vapor Deposition of Water-Free TiO2/Al2O3 and HfO2/Al2O3 Nanolaminates on Si and SiO2 in Preference to SiCOH

High‐Throughput Area‐Selective Spatial Atomic Layer Deposition of SiO2 with Interleaved Small Molecule Inhibitors and Integrated Back‐Etch Correction for Low Defectivity

Contact Info

Product

Resources

About

Selective Pulsed Chemical Vapor Deposition of Water-Free TiO₂/Al₂O₃ and HfO₂/Al₂O₃ Nanolaminates on Si and SiO₂ in Preference to SiCOH

High‐Throughput Area‐Selective Spatial Atomic Layer Deposition of SiO₂ with Interleaved Small Molecule Inhibitors and Integrated Back‐Etch Correction for Low Defectivity