Fully Solution-Processed Low-Voltage Aqueous In₂O₃ Thin-Film Transistors Using an Ultrathin ZrO_x Dielectric

Abstract

We reported here "aqueous-route" fabrication of In2O3 thin-film transistors (TFTs) using an ultrathin solution-processed ZrOx dielectric thin film. The formation and properties of In2O3 thin films under various annealing temperatures were intensively examined by thermogravimetric analysis, Fourier transform infrared spectroscopy, and atomic force microscopy. The solution-processed ZrOx thin film followed by sequential UV/ozone treatment and low-temperature thermal-annealing processes showed an amorphous structure, a low leakage-current density (∼1 × 10(-9) A/cm(2) at 2 MV/cm), and a high breakdown electric field (∼7.2 MV/cm). On the basis of its implementation as the gate insulator, the In2O3 TFTs based on ZrOx annealed at 250 °C exhibit an on/off current ratio larger than 10(7), a field-effect mobility of 23.6 cm(2)/V·s, a subthreshold swing of 90 mV/decade, a threshold voltage of 0.13 V, and high stability. These promising properties were obtained at a low operating voltage of 1.5 V. These results suggest that "aqueous-route" In2O3 TFTs based on a solution-processed ZrOx dielectric could potentially be used for low-cost, low-temperature-processing, high-performance, and flexible devices.

Identification of dipole disorder in low temperature solution processed oxides: its utility and suppression for transparent high performance solution-processed hybrid electronics

“…18–22 More recently, a few groups have reported solution processed dielectric layers formed at low process temperature (<300 °C); often these studies report unexpectedly high charge carrier mobilities, significant hysteresis in the device characteristics and rarely an attempt is made to characterize device stability. 23,24 Hence, there is an urgent need to understand these unexpected characteristics, instability and the device physics to enable full realization of all solution, low-temperature processed oxide TFTs.…”

Eco-friendly water-induced aluminum oxide dielectrics and their application in a hybrid metal oxide/polymer TFT

“…9 In order to achieve high-performance solution-processed oxide TFTs at low temperature, all these aspects should be taken into account. [12][13][14] As environment protection is an important issue, the use of nontoxic materials and employment of eco-friendly processes in the industry is strongly required. acetates, and chlorides.…”

Low-temperature solution-processed alumina dielectric films for low-voltage organic thin film transistors

“…Moreover, Al 2 O 3 based dielectrics, such as sodium beta-alumina [20], Al 2 O 3 /polymer nanocomposite [21], aluminum titanate [22] have also widely employed for TFTs. Recently, Al 2 O 3 have also been employed as high-performance dielectrics for transparent oxide TFTs, indicating the universal functionality [23][24][25].…”