Fully Transfer Characteristic-Based Technique for Surface Potential and Subgap Density of States in p-Channel Polymer-Based TFTs

Lee, Jae‐Wook; Jun, Sungwoo; Jang, Jaeman; Bae, Hagyoul; Kim, Hyeongjung; Chung, Jong Won; Choi, Sung-Jin; Kim, Dae Hwan; Lee, Jiyoul; Kim, Dong Myong

doi:10.1109/led.2013.2280014

Cited by 6 publications

(5 citation statements)

References 9 publications

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“…The value of Qch is extracted as follows. In the subthreshold region, Ids can be modeled as [25], [26]:…”

Section: B Noise Parameter Extraction and Simulationmentioning

confidence: 99%

“…where VT is the thermal voltage, Ids0 is the threshold drain current at Vgs= Vth, and m(Vgs) is the ideality factor experimentally obtained by [25]:…”

Section: B Noise Parameter Extraction and Simulationmentioning

confidence: 99%

“…where Ids1 and Ids2 are the drain currents corresponding to two similar gate voltages (Vgs1 and Vgs2). Referred to [25], [26], the m(Vgs) under subthreshold operation can also be described as: 1 ( ) 1 ( )…”

Section: B Noise Parameter Extraction and Simulationmentioning

confidence: 99%

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Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs

Chen,

Liu,

Lei

et al. 2024

IEEE J. Electron Devices Soc.

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The compatibility of the advanced BSIM-CMG to the low frequency noise (LFN) simulation in amorphous IZO TFTs is evaluated over subthreshold and linear regions. Two kinds of devices with SiO2-SiNx and Al2O3 gate insulators are studied. In these devices, the 1/f noise is confirmed as the main component of LFN. Then the dominated origin of the 1/f noise is explained by the ∆N model in devices with SiO2-SiNx layers, and by the ∆N-∆µ model in devices with Al2O3 layers, respectively. Based on these models, the interficial traps density and the Hooge's parameters are further calculated, and then applied to the extraction of noise parameters (NOIAeff, NOIB and NOIC) in BSIM-CMG. Compared to the measured data, the simulated results indicate that the noise can be well simulated by the improved BSIM-CMG both in the subthreshold and linear regions of IZO TFTs. It provides a comprehensive evaluation on the suitability of the BSIM-CMG for 1/f noise modelling in amorphous metal oxide TFTs.

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“…The value of Qch is extracted as follows. In the subthreshold region, Ids can be modeled as [25], [26]:…”

Section: B Noise Parameter Extraction and Simulationmentioning

confidence: 99%

“…where VT is the thermal voltage, Ids0 is the threshold drain current at Vgs= Vth, and m(Vgs) is the ideality factor experimentally obtained by [25]:…”

Section: B Noise Parameter Extraction and Simulationmentioning

confidence: 99%

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Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs

Chen,

Liu,

Lei

et al. 2024

IEEE J. Electron Devices Soc.

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“…A detailed discussion of the processing steps was provided elsewhere [1][2] 11 , the surface potential extracted from sub-threshold I-V curves is shown in Fig. 1(b).…”

Section: Devices Parameters and I-v Characteristicsmentioning

confidence: 99%

Analysis of low frequency noise characteristics inp-type polycrystalline silicon thin film transistors

Liu

Fang

2017

Mod. Phys. Lett. B

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Low frequency noises in the p-type polycrystalline silicon thin film transistors are investigated. It shows a pure 1/f γ (with γ near one) noise behavior which can be explained by emission and trapping processes of carriers between trapping states. Subsequently, the gate voltage-dependent drain current noise power spectral densities closely follow the mobility fluctuation model, and the average Hooge's parameter is then extracted. By considering traditional tunneling processes, the flat-band voltage spectral density is extracted and the concentration of traps in the grain boundary is calculated to be 7.17×10 20 cm −3 eV −1 . By converting the frequency to tunneling depth of carriers in the gate oxide, the spatial distribution of gate oxide trapped charges are obtained. Finally, the distribution of localized states in the energy band is extracted. The experimental results show an exponential deep states and tail states distribution in the band gap while N DD is about 1.5 × 10 20 cm −3 eV −1 , T DD is ∼ 617 K, N TD is ∼ 3.6 × 10 21 cm −3 eV −1 and T TD is ∼ 265 K.

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“…The surface potential 𝐸 − 𝐸 c with gate voltage 𝑉 gs can be extracted from the transfer characteristic curves, [19,20] and 𝑁 T versus 𝑆 id /𝐼 2 d can be obtained from Eq. ( 6).…”

mentioning

confidence: 99%

Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator

Chen¹,

Liu²,

Wu³

et al. 2018

Chinese Phys. Lett.

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Low-frequency noise (LFN) in all operation regions of amorphous indium zinc oxide (a-IZO) thin film transistors (TFTs) with an aluminum oxide gate insulator is investigated. Based on the LFN measured results, we extract the distribution of localized states in the band gap and the spatial distribution of border traps in the gate dielectric, and study the dependence of measured noise on the characteristic temperature of localized states for a-IZO TFTs with Al2O3 gate dielectric. Further study on the LFN measured results shows that the gate voltage dependent noise data closely obey the mobility fluctuation model, and the average Hooge’s parameter is about 1.18 × 10−3. Considering the relationship between the free carrier number and the field effect mobility, we simulate the LFN using the ΔN–Δμ model, and the total trap density near the IZO/oxide interface is about 1.23 × 1018 cm−3eV−1.

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Fully Transfer Characteristic-Based Technique for Surface Potential and Subgap Density of States in p-Channel Polymer-Based TFTs

Cited by 6 publications

References 9 publications

Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs

Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs

Analysis of low frequency noise characteristics inp-type polycrystalline silicon thin film transistors

Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator

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