2018
DOI: 10.1016/j.carbon.2017.10.089
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Fully-transparent graphene charge-trap memory device with large memory window and long-term retention

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Cited by 15 publications
(4 citation statements)
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“…, graphene and transition metal dichalcogenides) have emerged recently as highly functional semiconductors or insulators for the application of next-generation smart electronic and optoelectronic devices. For example, graphene barristors, graphene-based high speed devices, , graphene single-electron transistors, graphene quantum-dot transistors, robust graphene flash memories, high-detectivity MoS 2 phototransistors, and low-power h-BN memristors are tangible examples that can realize future nanoelectronics technology. Furthermore, spintronic devices with some distinctive functionalities have also been proposed and demonstrated on various 2D materials and their heterostructures ( e.g.…”
mentioning
confidence: 99%
“…, graphene and transition metal dichalcogenides) have emerged recently as highly functional semiconductors or insulators for the application of next-generation smart electronic and optoelectronic devices. For example, graphene barristors, graphene-based high speed devices, , graphene single-electron transistors, graphene quantum-dot transistors, robust graphene flash memories, high-detectivity MoS 2 phototransistors, and low-power h-BN memristors are tangible examples that can realize future nanoelectronics technology. Furthermore, spintronic devices with some distinctive functionalities have also been proposed and demonstrated on various 2D materials and their heterostructures ( e.g.…”
mentioning
confidence: 99%
“…The D band arises from the disordered graphitic AC, and the G band belongs to the E 2g vibrational Raman scattering mode at sp 2 -hybridized carbon lattices [82,83]. The large intensity ratio of I G /I D (≈1.02) implies that the AC nanosheets in MoO 3 /AC were highly graphitized with small numbers of stacked layers [84][85][86][87][88][89][90][91][92]. Thus, one can conjecture the present MoO 3 /AC nanocomposites to comprise highly conductive AC that may improve the electrical conductivity of the entire MoO 3 /AC nanocomposite system.…”
Section: Resultsmentioning
confidence: 99%
“…From the Raman scattering spectroscopy measurement, the sample also revealed its intrinsic vibration properties from only Si and C. As displayed in Figure 2 b, the sample showed the four predominant Raman bands at 514, 959, 1341, and 1590 cm −1 from Si and C. The former two bands at 514 and 959 cm −1 originate from the first and the second order transversal optical (TO) mode of crystalline Si [ 58 , 59 ], respectively; and the latter two vibration modes at 1341 and 1590 cm −1 come from D (sp 3 type) and G (sp 2 type) bands of graphitized C, respectively [ 60 , 61 ]. Here, it should be noticeable that the C nanoflakes exhibited the high intensity area ratio of I D /I G (i.e., Asp 3 /Asp 2 ≅ 0.99), indicative of the high graphitization (i.e., ultrathin C layers) and large amount of sp 2 carbon exists in the composite system [ 39 , 53 , 60 , 62 , 63 , 64 ]. The absence of extra lattice phases and their vibrations depict that the high purity C-Si nanocomposites were well-crystallized with their intrinsic carbonaceous and siliceous resources via the one-pot synthesis of magnesiothermic reduction using biomass BRH ashes.…”
Section: Resultsmentioning
confidence: 99%