Fully transparent nonvolatile resistive polymer memory

Abstract

We present a fully transparent nonvolatile resistive polymer memory device based on an anthracene-containing partially aliphatic polyimide along with indium tin oxide (ITO) top and bottom electrodes. High transmittance of over 90% in the wavelength range of 400 to 800 nm is accomplished with an ITO/polyimide/ITO/glass device. The device shows unipolar write-once-read-many times (WORM) memory behavior with an ON/OFF current ratio of 2 3 10 3 , and the ratio remained without any significant degradation for over 10 4 s. The memory behavior of the device is considered to be governed by trap-controlled space-charge limited conduction (SCLC) and local filament formation. Based on molecular simulation of the polyimide, the location of energy states is different from that in the conventional charge transfer (CT) mechanism. Despite the relatively low ON/OFF current ratio, our results can give insight into the development of fully transparent memory device.

Preparation of Polyimide/Graphene Oxide Nanocomposite and Its Application to Nonvolatile Resistive Memory Device

“…It is evident that the PI-GO film has high optical transparency similar to that of the ITO glass in the visible region. The high transparency of the PI-GO film can be attributed to the low degree of conjugation and charge transfer complex resulting from the aliphaticity and unsymmetrical spiro structure of the DAn unit [38]. The high transparency of the PI-GO film can lead to the potential development of transparent memory device if the transparent top and bottom electrodes are used.…”

“…RRAM has various advantages including fast speed, low power consumption and high storage density, and is considered to be one of the potential candidates for next generation nonvolatile memory [33,34,35]. PI-based RRAM is one of the important candidates due to good thermal stability and chemical resistance [36,37,38]. There are three RRAM types based on operation: bipolar, unipolar, and Write-Once-Read-Many-Times (WORM) RRAMs.…”

“…Bipolar RRAM can be turned ON and OFF many times by applying opposite voltage polarities [33] while unipolar RRAM by two different voltages (low and high) with the same polarity [37]. Then, WORM RRAM is turned ON only once and keeps its status permanently [38] like a writable compact disc.…”

“…Furthermore, the memory layer in this work is composed of GO and a PI derived from rel-(1′R,3S,5′S)-spiro[furan-3(2H),6′-[3]oxabicyclo[3.2.1]octane]-2,2′,4′,5(4H)-tetrone (DAn) and 2,6-diaminoanthracene (AnDA). The anthracene-containing PI film was reported to show resistive memory behavior and optical transparency [38]. The PI-GO nanocomposite film was prepared and used to fabricate an ITO/PI-GO/aluminum (Al) memory device and its memory behavior was investigated.…”

Synthesis and memory characteristics of highly organo‐soluble hyperbranched polyimides with various electron acceptors

“…Different from the traditional inorganic silicon‐based technologies, which information is stored based on charging and discharging of the silicon‐cells, for polymer memory devices, information is stored based on the transition of polymer active layer from low‐conductivity state (OFF) to high‐conductivity state (ON) induced by an external electric field. Various types of polymer materials including conjugated polymers, functional polyimides (PIs) and complex systems have been developed for memory applications …”