Fully valley- and spin-polarized magnetocapacitance in n-type monolayer MoS₂

Abstract

We present a theoretical investigation on the quantum magnetocapacitance (MC) for n-type monolayer MoS2 under a perpendicular magnetic field. We find that the MC clearly reflects the valley- and spin-resolved Landau levels (LLs). Interestingly, the MC is fully valley- and spin-polarized, which results in perfect square-wave-shaped polarization. This fully valley- and spin-polarized MC, especially the peak corresponding to the lowest LL, may be of great significance in valleytronic and spintronic device applications because it provides a magnetic method to control the electron valley and spin degrees of freedom. The MC behavior as a function of the magnetic field is also discussed.

Interfacial interaction in monolayer transition metal dichalcogenide/metal oxide heterostructures and its effects on electronic and optical properties: The case of MX2/CeO2

“…For the four vdWs heterostructures, the equilibrium distance, d, was in the 2.76-2.91 Å range, indicating that in all cases the interaction between the monolayer MX 2 and the CeO 2 (111) surface was indeed vdWs rather than covalent, in accordance with previous reports [2.96, 2.79, 3.32, and 3.01 Å for graphene=CeO 2 , 26) MoS 2 =MoSe 2 , 5) and MoS 2 = ZnO(0001), 22) respectively].…”

“…T wo-dimensional transition metal dichalcogenides (2D TMDs), with the formula MX 2 (where M is a transition metal element and X is a chalcogen element), have been receiving increasing attention owing to their unique optoelectronic and catalytic properties because of their tunable electronic structures. [1][2][3][4][5] The intra-layer M-X bonds in 2D TMDs are predominantly covalent in nature, whereas neighboring layers interact via weak van der Waals (vdWs) forces, which allows to readily cleave the layers along the layer plane. 6,7) This bonding characteristic makes monolayer or few-layer TMDs particularly attractive for integration with various materials, to form vdWs heterojunctions not constrained by the crystal lattice matching, 2) thus maintaining their excellent properties.…”

Linear magnetotransport in monolayerMoS2

“…19 Due to the spin-valley coupling, the magnetic control of the valley degree of freedom in monolayer MoS 2 in the presence of normal magnetic field has been achieved. 20 The magneto-optical properties 21 and magnetocapacitances 22 have been analyzed in this system. However, even the basic SdHO considering all kinds of scattering mechanisms in this single layer has not been seriously involved either in theoretical or in experimental works.…”

Electronic and thermal spin effect of molecular nanowires between graphene electrodes

“…14,29 Therefore, a remarkable rise in the spin polarization for M2 and M3, and an interface-induced special spin polarization can be obtained. 30,31 Here, we dene the SFE as h ¼ |(I a À I b )/(I a + I b ). The calculated results for the magnetic device effects are plotted in Fig.…”