Functional characterization of 3D-DDTC detectors fabricated at FBK-irst

Zoboli, A.; Boscardin, M.; Bosisio, L.; Betta, G.-F. Dalla; Eckert, S.; Kühn, Susanne; Piemonte, C.; Parzefall, U.; Ronchin, S.; Zorzi, N.

doi:10.1109/nssmic.2008.4774937

Cited by 14 publications

(12 citation statements)

References 14 publications

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“…The measured collected charge released by a m.i.p (Fig. 4) gradually increases with bias in the low voltage range as the substrate gets more and more depleted and as the radiation induced trapping becomes less important because of the shorter collection times [13]. Then, it starts increasing exponentially at a voltage of about 200 V, and finally exceeds the collected charge of the un-irradiated sensor.…”

Section: A Selected Example: Multiplication Effects On Irradiated Dmentioning

confidence: 97%

Simulations of 3D detectors

Giacomini¹

2012

Proceedings of the 20th Anniversary International Workshop on Vertex Detectors — PoS(Vertex 2011)

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3D detectors, in which the n and p electrodes are columns etched through the silicon substrates, have proven high radiation tolerance and thus are one of the most suitable candidates for harsh radiation environments, such as vertex detectors. Being the process much more complicated than the planar one, over the years, several simplified 3D families have been studied and fabricated. In this context, TCAD simulations are an excellent tool to predict the behaviour and performance of new detector concepts. In this paper we give an overview of this simulation activity mainly focussing on the 3D FBK technology. We show that it is possible to reproduce also unexpected phenomena, such as the observed charge multiplication in highly irradiated devices.

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Section: A Selected Example: Multiplication Effects On Irradiated Dmentioning

confidence: 97%

Simulations of 3D detectors

Giacomini¹

2012

Proceedings of the 20th Anniversary International Workshop on Vertex Detectors — PoS(Vertex 2011)

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“…References [3]- [8] describe various set-ups utilizing a similar approach to data analysis. In addition, studies presented in [9], [10] …”

Section: Test Beam Data Analysismentioning

confidence: 99%

Track-Induced Clustering in Position Sensitive Detector Characterization

Maënpaä

Kortelainen

2010

IEEE Trans. Nucl. Sci.

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Abstract-The formation of clusters in the data analysis of position-sensitive detectors is traditionally based on signal-to-noise ratio thresholds. For detectors with a very low signal-to-noise ratio, e.g., as a result of radiation damage, the total collected charge obtained from the clusters is biased to the greater signal values resulting from the thresholds. In this paper an unbiased method to measure the charge collection of a silicon strip detector in a test beam environment is presented. The method is based on constructing the clusters on test detectors around the impact point of the reference track.

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“…Parker and his colleagues proposed a structure of solid-state radiation detectors using a 3D array of electrodes that penetrate into the detector's bulk [1]. In recent years, researchers of 3D detectors have mainly focused their efforts on improving detector radiation hardness by proposing various 3D structures as tracking detectors for the high luminosity upgrade of the Large Hadron Collider (HL-LHC) [2][3][4][5][6][7][8]. Examples of them are 1) In 2008, a non-fully penetrating, dual-column structure was proposed [6], with an electrode spacing of 50μm; and 2) a double-side, dual column structure [7].…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, researchers of 3D detectors have mainly focused their efforts on improving detector radiation hardness by proposing various 3D structures as tracking detectors for the high luminosity upgrade of the Large Hadron Collider (HL-LHC) [2][3][4][5][6][7][8]. Examples of them are 1) In 2008, a non-fully penetrating, dual-column structure was proposed [6], with an electrode spacing of 50μm; and 2) a double-side, dual column structure [7]. In 2010, it was pointed out that in future development for detectors irradiated up to 1x10 16 n/cm 2 , to fully depleted a dual-column 3D detector with a reasonable bias, the columns' spacing should be further reduced to 30μm [8].…”

Section: Introductionmentioning

confidence: 99%

3D Simulation and Modeling of Ultra-fast 3D Silicon Detectors

Liu

Feng

2017

MATEC Web Conf.

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Abstract. 3D detectors with very small electrode spacing can provide ultra-fast detection due to their extremely small charge collection time. Since the detector full depletion voltage and charge collection time are independent to the detector thickness, ultra-fast 3D detectors can be made relatively thick (or not too thin, a200 μm) to ensure a large signal. The results of the 3D simulations and modeling of 3D silicon detectors with very small electrode spacing and relatively large thickness will be shown in this paper. The column spacing LP is in the range of 5 μm to 10 μm. At a bias voltage of only a few volts, the electric field in the detector can be large enough to ensure the carrier saturation drift velocity in most volume of the detector, and the detector charge collection time there can be as short as 10's of ps. In this paper, we will analysis the simulated electrical characteristics of this detector structure through systematic 3D simulations using the Silvaco's TCAD tool. Profiles of detector electric potential and electric field will be presented. We will investigate the region of low electric field (the "slow region") in the detector. We will also exam whether the detector reach the breakdown condition at operation voltages suggested in this work.

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Functional characterization of 3D-DDTC detectors fabricated at FBK-irst

Cited by 14 publications

References 14 publications

Simulations of 3D detectors

Simulations of 3D detectors

Track-Induced Clustering in Position Sensitive Detector Characterization

3D Simulation and Modeling of Ultra-fast 3D Silicon Detectors

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