Functional Ferroic Domain Walls for Nanoelectronics

Sharma, Pankaj; Schoenherr, Peggy; Seidel, Jan

doi:10.3390/ma12182927

Cited by 56 publications

(47 citation statements)

References 195 publications

(307 reference statements)

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“…Their dynamical behaviour is subject to intense fundamental and applied research as it is at the core of ferroelectric switching [1][2][3][4] , which is the key design parameter, e.g., in piezoelectric 5,6 , magnetoelectric [7][8][9] and memristive [10][11][12] devices, as well as in devices operating above GHz frequencies 13 . Furthermore, the recent research on two dimensional functionalities offered by ferroelectric domain walls [14][15][16][17] will find further applications once strategies to dynamically deploy the functionalities, through the motion of domain walls, have been found.…”

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confidence: 99%

Avalanche criticality during ferroelectric/ferroelastic switching

2021

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Field induced domain wall displacements define ferroelectric/ferroelastic hysteresis loops, which are at the core of piezoelectric, magnetoelectric and memristive devices. These collective displacements are scale invariant jumps with avalanche characteristics. Here, we analyse the spatial distribution of avalanches in ferroelectrics with different domain and transformation patterns: Pb(Mg1/3Nb2/3)O3–PbTiO3 contains complex domains with needles and junction patterns, while BaTiO3 has parallel straight domains. Nevertheless, their avalanche characteristics are indistinguishable. The energies, areas and perimeters of the switched regions are power law distributed with exponents close to predicted mean field values. At the coercive field, the area exponent decreases, while the fractal dimension increases. This fine structure of the switching process has not been detected before and suggests that switching occurs via criticality at the coercive field with fundamentally different switching geometries at and near this critical point. We conjecture that the domain switching process in ferroelectrics is universal at the coercive field.

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confidence: 99%

Avalanche criticality during ferroelectric/ferroelastic switching

2021

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“…These concepts were envisioned very early-on 18 and formulated as 'domain wall nanoelectronics' [19][20][21] or 'domain boundary engineering' 22 , but progress in developing this new technology has been relatively slow. In general, robust, and definitive information about all the fundamental mechanisms responsible for ferroelectric domain wall conduction (BOX 3) are still unclear for many materials, which is one reason why proof-of-principle devices have emerged only recently.…”

Section: Introductionmentioning

confidence: 99%

Domain-wall engineering and topological defects in ferroelectric and ferroelastic materials

et al. 2020

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Ferroelectric and ferroelastic domain walls are two-dimensional (2D) topological defects with thicknesses approaching the unit cell level. When this spatial confinement is combined with observations of emergent functional properties, such as polarity in non-polar systems or electrical conductivity in otherwise insulating materials, it becomes clear that domain walls represent a new and exciting state of matter. In this review, we discuss the exotic polarisation profiles that can arise at domain walls with multiple order parameters and the different mechanisms that lead to domain wall polarity in non-polar ferroelastic materials. The emergence of energetically degenerate variants of the domain walls themselves suggests the existence of interesting quasi-1D topological defects within such walls. We also provide an overview of the general notions which have been postulated as fundamental mechanisms responsible for domain wall conduction in ferroelectrics. We then discuss the prospect of combining domain walls with transition regions observed at phase boundaries, homo-and heterointerfaces, and other quasi-2D objects, enabling emergent properties beyond those available in today's topological systems. Key points• In ferroelectrics, the emergence of a second polarisation component leads to analogues of Bloch and Néel walls. The stabilization of these walls opens the possibility for quasi-1D topological defects separating wall regions of opposite polarities.• Polar domain walls in ferroelastics rely on two mechanisms: a polarity imposed by the natural symmetry of strain-compatible domain walls, which can often be described by flexoelectric gradient coupling, and the emergence of a potentially switchable polarity when their natural symmetry is broken.• Several mechanisms are responsible for domain wall conduction in ferroelectrics: extrinsic intra-bandgap defect states, intrinsic suppression of the conduction band and intrinsic shift of the band structure induced by local electric fields.• Transition regions occurring at phase boundaries, homo-and heterointerfaces, and other quasi-2D objects probably exist at a smaller length scale, in the vicinity of domain walls, and could lead to exceptional properties and coupling phenomena.

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“…The latest example of this is theoretical prediction and experimental demonstration of dissipation‐less edge‐conducting surface states in topological insulators. [ 4–7 ] Besides low‐dimensional layered materials, [ 2,3,8 ] interfaces between [ 8–10 ] and within [ 11–21 ] materials present another attractive platform for the investigation of novel rich physics and electronic effects. Here, the study of nanoscale interfaces constituting topological defects in various types of order in solids, for example, polar order in ferroelectrics, has led to the emergence of another concept, that of domain wall nanoelectronics.…”

Section: Introductionmentioning

confidence: 99%

“…Here, the study of nanoscale interfaces constituting topological defects in various types of order in solids, for example, polar order in ferroelectrics, has led to the emergence of another concept, that of domain wall nanoelectronics. [ 12,15,17,18 ]…”

Section: Introductionmentioning

confidence: 99%

Roadmap for Ferroelectric Domain Wall Nanoelectronics

Sharma

Moïse

Colombo

et al. 2021

Adv Funct Materials

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Ferroelectric domain walls naturally form at nanoscale interfaces of polar order leading to electronic properties distinct from the bulk that can also be electrically programmed. These nanoscale features currently are being actively explored for the development of agile, low‐energy electronics for applications in memory, logic, and brain‐inspired neuromorphic computing. In this article, the authors review the state of the art, the latest developments, and outline key device and material challenges, emerging opportunities, and new directions for the accelerated engineering and commercialization of domain wall technology.

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Functional Ferroic Domain Walls for Nanoelectronics

Cited by 56 publications

References 195 publications

Avalanche criticality during ferroelectric/ferroelastic switching

Avalanche criticality during ferroelectric/ferroelastic switching

Domain-wall engineering and topological defects in ferroelectric and ferroelastic materials

Roadmap for Ferroelectric Domain Wall Nanoelectronics

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