CitationAlfaraj N, Alhamoud AA, Priante D, Janjua B, Alatawi AA, et al.Functional integrity and stable high-temperature operation of planarized ultraviolet-A AlxGa1−xN/AlyGa1−yN multiplequantum-disk nanowire LEDs with charge-conduction promoting interlayer. Gallium Nitride Materials and Devices XIV. Available: http://dx.ABSTRACT Unprecedented high-temperature operational stability of interfacial silicide-free ultraviolet-A multiple-quantumdisk AlGaN nanowire-based light-emitting diodes on metal is achieved and investigated. Reasonable variations in device operational parameters across a wide range of temperatures demonstrate the high quality of the layer interfaces and efficient carrier injection. We previously presented ultraviolet-A quantum-confined Al x Ga 1−x N/Al y Ga 1−y N nanowire-based light-emitting diodes and studied their steady-state electro-and photoluminescent characteristics at room temperature [Priante et al., Opt. Mater. Express 7(12), 4214 (2017)]. Herein, we significantly expand the scope of our previous work by investigating the operational stability of the device across a wide range of temperatures (−50-100 • C) with conformal parylene-C deposition, forming a nanowire forest as a polymer/nanowire three-dimensional composite material. This work constitutes part of a larger study into the operational stability of ultraviolet light-emitting diode chemical sensors at a wide range of temperatures for operation in harsh environments such as in downhole oil exploration.