Functional nano-structuring of thin silicon nitride membranes

Abstract

The paper describes the development and production of a nano-optical device consisting of a nano-perforated layer of silicon nitride stretched in a single-crystal silicon frame using electron beam lithography (EBL) and reactive ion etching (RIE) techniques. Procedures for transferring nanostructures to the nitride layer are described, starting with the preparation of a metallic mask layer by physical vapor deposition (PVD), high-resolution pattern recording technique using EBL and the transfer of the motif into the functional layer using the RIE technique. Theoretical aspects are summarized including technological issues, achieved results and application potential of patterned silicon nitride membranes.

Nanostructures for Achieving Selective Properties of a Thermophotovoltaic Emitter

“…The formation of structures using RIE was carried out with the support of the Institute of Scientific Instruments, Academy of Sciences, in Brno. Electron lithography and reactive ion etching techniques allow the recording of micro and nanostructures from different types of inorganic and organic layers or surfaces [ 16 ]. However, the sample used in the experiment, i.e., from rolled tungsten (containing large grains of material), is not exactly one of the standard types of sample on which lithographic operations are performed, such as recording the emission nanostructure.…”