2013
DOI: 10.1007/s12274-013-0386-7
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Functional nanogenerators as vibration sensors enhanced by piezotronic effects

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Cited by 56 publications
(40 citation statements)
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“…[14][15][16][17] These devices can generate signals under certain environment physical or chemical signals changes, and then operate in a manner. [18][19][20][21][22] In general, they consist of numerous circuits or intricate layered matrix arrays, and are manufactured by complicated producing processes, which lead to an intensive energy consumption and limit their wide applications. By developing the highly effi cient, scalable and low-cost fabrication advantages of simple and low-cost character as well as quick and convenient fabrication.…”
Section: Introductionmentioning
confidence: 99%
“…[14][15][16][17] These devices can generate signals under certain environment physical or chemical signals changes, and then operate in a manner. [18][19][20][21][22] In general, they consist of numerous circuits or intricate layered matrix arrays, and are manufactured by complicated producing processes, which lead to an intensive energy consumption and limit their wide applications. By developing the highly effi cient, scalable and low-cost fabrication advantages of simple and low-cost character as well as quick and convenient fabrication.…”
Section: Introductionmentioning
confidence: 99%
“…The first piezoelectric nanogenerator (NG) based on zinc oxide nanowires for mechanical to electrical energy conversion was proposed by Wang and Song (2006). It started with promising investigations on such devices, for example, to harvest vibrations (Chen et al 2010(Chen et al , 2013Poulin-Vittrant et al 2015;Zhan et al 2014), human body motion (Lee et al 2014;Yang et al 2009), wind (Gao et al 2015), acoustic waves (Wang et al 2007), and other mechanical energy forms (Wang 2012). Piezoelectric generators are also used as passive or self-powered sensors (Chen et al 2013;Fan et al 2012;Fang et al 2015;Hua and Wang 2015).…”
Section: Introductionmentioning
confidence: 99%
“…Recently, a large area of NWAs/NRAs was integrated into devices to obtain a large current value. 7,33 Nevertheless, the switch ratio (SR) is only ∼100 at 3 V. 33 It is worth mentioning that a 10 4 −10 7 scales SR of field-effect transistors or ultraviolet (UV) detectors is achieved by inserting insulating materials, due to the mechanism of electrons trap-assisted tunneling. 34−37 These insulating materials also promoted the characteristics of nanogenerators and spintronic devices.…”
Section: ■ Introductionmentioning
confidence: 99%