Functionally Graded Bi<inf>2</inf>Te<inf>3</inf> based material for above ambient temperature application

Abstract

This study is concerned with the preparation of Bi 0.4 Sb 1.6 Te 3 Functionally Graded (FG) samples by a powder metallurgical approach for above ambient temperature applications. The FG sample is based on two components with different carrier concentration. The first is designed for a maximal figure of merit at room temperature, the second, doped with Pb, is meant for operation at higher temperatures. The transport properties of the two components of the FG sample, namely the Seebeck coefficient and electrical resistivity, have been determined from room temperature up to 550 K. The preparation of FG samples, their chemical stability and their transport properties over this temperatures range were examined and will be discussed.

Development of Solar Energy Systems Based on High Performance Bulk and Film Thermoelectric Modules

“…The n-and p-type Bi 2 Te 3 based compounds were prepared using a hot pressing technique, which is a high-pressure (100 ton) powder metallurgy process for forming powder compact at high temperature of ~ 670 K, sufficient to induce sintering (operating time ~ 0.5 h) (Figure 3). The process was carried out in argon atmosphere [24][25][26][27]. Before hot pressing, the materials were synthesized in evacuated silica tubes.…”

Development of Spark Plasma Syntering (SPS) technology for preparation of nanocrystalline p-type thermoelctrics based on (BiSb)2Te3

“…Good mechanical properties [2][3]. Alloys of Bi2Te3 and Sb2Te3 are the best performing p-type thermoelectrics near room temperature and have been the subject of extensive engineering efforts [4][5][6][7][8][9][10]. The main properties of p-type thermoelectric material on (BiSb)2Te3 semiconductor alloys are presented in Table 1.…”