2017
DOI: 10.1021/acs.chemmater.7b04473
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Functionally Graded (PbTe)1–x(SnTe)x Thermoelectrics

Abstract: Functionally graded (PbTe)1–x (SnTe) x ingots have been prepared by Bridgman crystal growth method for the first time. From SEM-EDX, the composition (x) of the ingot was found to increase smoothly from 10.6 to 25.4 along the direction of the growth. The gradual change in composition is shown to cause a decrease in band gap as crystallization proceeds, and to be accompanied by a change in carrier concentration. By a Potential-Seebeck microprobe (PSM), a smoothly varying Seebeck coefficient was measured along t… Show more

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Cited by 23 publications
(10 citation statements)
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“…[6] Both results seem to fortify explanation (1) above, as adding Sn to PbTe increases the L-Σ gap and reduces Σ contributions to transport while Cd does the opposite. [38,39] However, the defects and strain inserted from the chosen additions must be considered. Alloying PbTe with Sn forms a large number of p-type cation vacancies, and Cd is known to increase internal dislocation strain.…”
mentioning
confidence: 99%
“…[6] Both results seem to fortify explanation (1) above, as adding Sn to PbTe increases the L-Σ gap and reduces Σ contributions to transport while Cd does the opposite. [38,39] However, the defects and strain inserted from the chosen additions must be considered. Alloying PbTe with Sn forms a large number of p-type cation vacancies, and Cd is known to increase internal dislocation strain.…”
mentioning
confidence: 99%
“…An approach to enhance the conversion efficiency of a FGTEM is to optimize the zT by tuning the amount of dopant at different spatial positions in the material 52 . Analytical models and numerical simulations found that a carrier concentration or a composition gradient could widen the temperature range of optimum zT of a material [53][54][55][56][57][58][59][60][61] . These FGTEMs showed increases in the temperature range of their optimum zT s. FGTEM through grading carrier concentration has the advantages to have a gradual phase transition without inducing any contact resistances.…”
Section: Introductionmentioning
confidence: 99%
“…Januszko et al prepared gradient samples using sedimentation of atoms under a strong gravitational field and obtained a large diffusion area in a Bi 1-x Sb x alloy [25]. Hedegaard et al prepared the (PbTe) 1-x (SnTe) x [26] and Ge 1-x Si x [27] gradient samples by the Bridgman and Czochralski crystal growth method and used the Potential-Seebeck Microprobe (PSM) to investigate the electrical-transport properties. By the Bridgman method, Kohri et al grew a Ge-graded (PbTe) 1-x (GeTe) x sample and investigated the influence of the Ge content on the thermoelectric transport properties [28].…”
Section: Introductionmentioning
confidence: 99%