Fundamental absorption edge in GaN, InN and their alloys

Osamura, Kōzō; Nakajima, Kazuo; Murakami, Yôtarô; Shingu, Paul Hideo; Ohtsuki, Akira

doi:10.1016/0038-1098(72)90474-7

Cited by 182 publications

(86 citation statements)

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“…Especially quality of InN grown by RF-MBE have improved very quickly within a relatively short period of time [1][2][3] and electrical properties with room temperature electron mobility over 2100 cm 2 /Vs and residual carrier concentration close to 3×10 17 /cm 3 were reported [4]. Band gap energy of InN has long been believed to be 1.9 eV after it has been reported from optical absorption experiments using poly-crystalline InN and InGaN [5,6]. Very recent studies on PL, optical absorption and photo-reflectance measurements using high quality InN grown both by MOCVD and RF-MBE, have demonstrated that the fundamental band gap of single crystalline InN should be 0.7-0.8 eV [7][8][9][10] rather than long believed 1.9 eV.…”

Section: Introductionmentioning

confidence: 96%

Recent development of InN RF‐MBE growth and its structural and property characterization

Nanishi

Saito

Yamaguchi

et al. 2004

phys. stat. sol. (c)

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Section: Introductionmentioning

confidence: 96%

Recent development of InN RF‐MBE growth and its structural and property characterization

Nanishi

Saito

Yamaguchi

et al. 2004

phys. stat. sol. (c)

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“…Such poor growth results in decreased carrier transport, background n doping due to Fermi pinning above the conduction band edge, 34 and a bandgap that is greater than expected. 35,36 By using a Schottky-barrier junction with n-doped In ξ Ga 1−ξ N, as opposed to a p-i-n junction, the difficulty of p doping the material is avoided.…”

Section: Introductionmentioning

confidence: 99%

Enhanced efficiency of Schottky-barrier solar cell with periodically nonhomogeneous indium gallium nitride layer

2017

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, "Enhanced efficiency of Schottky-barrier solar cell with periodically nonhomogeneous indium gallium nitride layer," J. Photon. Energy 7(1), 014502 (2017), doi: 10.1117/1.JPE.7.014502. Abstract. A two-dimensional finite-element model was developed to simulate the optoelectronic performance of a Schottky-barrier solar cell. The heart of this solar cell is a junction between a metal and a layer of n-doped indium gallium nitride (In ξ Ga 1−ξ N) alloy sandwiched between a reflection-reducing front window and a periodically corrugated metallic back reflector. The bandgap of the In ξ Ga 1−ξ N layer was varied periodically in the thickness direction by varying the parameter ξ ∈ ð0;1Þ. First, the frequency-domain Maxwell postulates were solved to determine the spatial profile of photon absorption and, thus, the generation of electron-hole pairs. The AM1.5G solar spectrum was taken to represent the incident solar flux. Next, the drift-diffusion equations were solved for the steady-state electron and hole densities.Numerical results indicate that a corrugated back reflector of a period of 600 nm is optimal for photon absorption when the In ξ Ga 1−ξ N layer is homogeneous. The efficiency of a solar cell with a periodically nonhomogeneous In ξ Ga 1−ξ N layer may be higher by as much as 26.8% compared to the analogous solar cell with a homogeneous In ξ Ga 1−ξ N layer. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…The first estimated direct band gap was about 1.9 eV. 6) However, other studies reported values ranging from 1.7 to 3.1 eV. 3,[7][8][9][10][11] The most commonly cited measurement on optical absorption is that of Tansley and Foley;12) they reported band gap energy of 1.89 eV at room temperature.…”

Section: Introductionmentioning

confidence: 99%