Fundamental Approach in Digital Circuit Design for 1-MHz Frequency PWM Gate Drive Application

Abstract

This paper discusses the design of a digital programmable logic circuit to produce a 5 V -output square wave pulses for four high power MOSFET switches using a fixed PWM circuit. It will be applied to drive the synchronous rectifier buck converter (SRBC) circuit. The PWM signals with multiple fixed time delay of 15 ns, 232 ns, 284 ns and 955 ns are generated. The steps taken to analyze each propagation time delay of each logic gate used and its combination are carefully studied. A multiplexer is added at the output of the logic circuit to select and produce the desired output pulses of 20 % duty ratio. The logic outputs are compared with the analog pulses and results match each other within 1 % in difference.

Structure and Charge Compensation of Heteropolar SiC/GaN Interfaces

“…The considerable potential of the nitrides for high power, high frequency, and high temperature microelectronics (see e.g. [1]) has resulted in numerous studies of GaN and AlN layers grown onto both silicon and silicon carbide substrates. Both theoretical and experimental investigations have shown that the substrate plays a major role in determining the quality of the optoelectronic material deposited on it, and that the important feature inuencing this quality is the strain resulting from lattice--mismatch.…”

Theoretical study of InN/GaN short period superlattices to mimic disordered alloys

“…1 "Wide bandgap semiconductors" are a relatively new field of research in materials science, and most of interest in nitrides today orbits around optoelectronics, such as LEDs, lasers, and high-power/temperature/frequency electronics, with new commercial devices becoming available every day. [2][3][4][5][6][7][8] Regarding GaN and InN bandgaps, this large variation can be also considered initially promising to be applied in solar cell multijunctions technology, with a potential efficiency comparable to standard Ge/InGaAs/InGaP technology. 9 However, considering each subcell of a multijunction solar cell as composed with InGaN alloy materials with different In compositions (providing large variation in bandgap), the system shall present large mismatch in lattice parameters.…”