2017
DOI: 10.1002/celc.201700419
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Fundamental Characteristics of a Glucose Transistor with a Chemically Functional Interface

Abstract: Semiconductor‐based biosensors are suitable for the detection of small molecules such as glucose as long as they have molecular charges. However, biological samples include various ionic molecules such as proteins; thus, their nonspecific adsorption should be prevented to reduce background noise. In this study, we optimized a field‐effect transistor (FET)‐based glucose sensor, that is, a glucose transistor, for more precise and highly sensitive glucose sensing. Using the glucose transistor modified with 4‐merc… Show more

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Cited by 11 publications
(9 citation statements)
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“…On the other hand, is shown to be the actual driving force of an ion-sensitive field-effect transistor (ISFET) with the Ta 2 O 5 membrane, which is related to the logarithm of H + concentration by the following equations [29]: …”
Section: Resultsmentioning
confidence: 99%
“…On the other hand, is shown to be the actual driving force of an ion-sensitive field-effect transistor (ISFET) with the Ta 2 O 5 membrane, which is related to the logarithm of H + concentration by the following equations [29]: …”
Section: Resultsmentioning
confidence: 99%
“…It is worth noting that the obtained sensitivity is low if compared to the limiting value of 59 mV/decade, expected if biomolecule binding would follow the Nernstian model of equilibrium potentials of ions across semipermeable membranes [17]. Such an extreme value has been previously reported for glucose [37] and urea [32] BioFETs with gold EG. However, there are significant differences between proton equilibria and macrobiomolecule binding equilibria, which imply that the Nernst model would not apply to protein binding [17].…”
Section: Response To P53 Wt : Extended-gate Surface Potential Changes and Detection Limitmentioning
confidence: 66%
“…The extended-gate ISFET sensor was used for monitoring a self-oscillation behavior of a polymer brush grafted to the Ta 2 O 5 gate surface. In this case, Ta 2 O 5 film (100 nm) with the surface area of 12 12 mm 2 was sputtered on a Au (100 nm)/Cr (20 nm) electrode, which was connected to the gate of a silicon-based n-channel junction-type FET (K246-Y9A, Toshiba), as an extended-gate electrode, considering ease of surface treatments 42 , 43 .…”
Section: Methodsmentioning
confidence: 99%