Fundamental physics of infrared detector materials

Kinch, M. A.

doi:10.1007/s11664-000-0229-7

Cited by 144 publications

(83 citation statements)

References 18 publications

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“…In the above equation, n th is the density of thermal carriers at the temperature T, t is the carrier lifetime and a is the absorption coefficient of the material. In further considerations we use a simple set of fundamental detector parameters described in excellent Kinch's paper [89] to compare the performance of different material systems used in infrared detector technology.…”

Section: Anticipated Advantages Of Qdipsmentioning

confidence: 99%

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New material systems for third generation infrared photodetectors

Rogalski¹

2008

Opto-Electronics Review

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Third-generation infrared (IR) systems are being developed nowadays. In the common understanding, these systems provide enhanced capabilities-like larger numbers of pixels, higher frame rates, and better thermal resolution as well as multicolour functionality and other on-chip functions. In this class of detectors, two main competitors, HgCdTe photodiodes and quantum-well photoconductors, have being developed.Recently, two new material systems have been emerged as the candidates for third generation IR detectors, type II InAs/GaInSb strain layer superlattices (SLSs) and quantum dot IR photodetectors (QDIPs).In the paper, issue associated with the development and exploitation of multispectral photodetectors from these new materials is discussed. Discussions is focused on most recently on-going detector technology efforts in fabrication both photodetectors and focal plane arrays (FPAs). The challenges facing multicolour devices concerning complicated device structures, multilayer material growth, and device fabrication are described.

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Section: Anticipated Advantages Of Qdipsmentioning

confidence: 99%

“…The main disadvantage of the QDIP is the large inhomogeneous linewidth of the quantum-dot ensemble variation of dot size in the Stranski-Krastanow growth mode [89,93]. As a result, the absorption coefficient is reduced, since it is inversely proportional to the ensemble linewidth.…”

Section: Anticipated Advantages Of Qdipsmentioning

confidence: 99%

New material systems for third generation infrared photodetectors

Rogalski¹

2008

Opto-Electronics Review

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“…Mercury cadmium telluride (MCT) alloys have an advantage over other photosensitive materials because of unique physical properties [1]. To realize large format IR FPA based on MCT it is necessary to grow material with high lateral composition uniformity that leads to wavelength uniformity.…”

Section: Introductionmentioning

confidence: 99%

“…That determines a narrow range of optimal growth condition for fabrication MCT MBE with a minimal defect [5]. But intensive development of 1 To whom any correspondence should be addressed. equipment is being carried out for MCT MBE growth on large in diameter (up to 6") (112) Si substrates.…”

Section: Introductionmentioning

confidence: 99%

HgCdTe nanostructures on GaAs and Si substrate for IR and THz radiation detecting

Yakushev¹,

Варавин

Васильев

et al. 2012

J. Phys.: Conf. Ser.

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Abstract. All-round studies of heteroepitaxial HgCdTe nanostructures (NS) growth on GaAs and Si substrates by molecular beam epitaxy have been carried out. In case of Si substrate HgCdTe NS's is very perspectives for IR detectors because of equal thermal expention coefficient with silicon read-out circuits. The problems of HgCdTe conjugations with Si at epitaxy connected with large differences in lattice mismatch and differences in chemical bonding that leads to antiphased domains. We found that the precise formation of transition layer (2 nm in thickness between Si substrates and first ZnTe buffer layer leads to growth HgCdTe NS's without antiphrasis domains. V-defects and etch pits densities are equal to 10 3 cm -2 and 10 7 cm -2 respectively. The HgCdTe/Si were used for fabrication photovoltaic 640×512 MWIR focal plane arrays. The operability for 1/2 = 4.2 m (77К) was over 97%. The response (Sv) and NETD were as 1,5×10 9 V/W and less 20 mK respectively. We developed the precise growth of symmetric and antisymmetric HgTe QW. We found the following effects: the presence 2D electron gas with high mobilities over 5×10 5 cm/V×s in doped HgTe QW, the presence @D holes and electrons in undoped HgTe QW and high sensitivity to linear and circular polarized IR and THz radiation in 6 -400 m region.

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“…Near−room operation long wavelength infrared (IR) (8-16 μm) photodetectors is one of hot topics of infrared techno− logy and their fast response found numerous practical appli− cations [1][2][3][4]. During last three decades, the advanced room or near−room temperature HgCdTe detectors have been de− veloped in Poland and they are manufactured by Vigo Sys− tem S.A. [5].…”

Section: Introductionmentioning

confidence: 99%

High frequency response of near-room temperature LWIR HgCdTe heterostructure photodiodes

Kopytko

Jóźwikowski

Jóźwikowska

et al. 2010

Opto-Electronics Review

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The high frequency response of near-room temperature long wavelength infrared (LWIR) HgCdTe heterostructure photodiodes is investigated using a Fourier space method. The MOCVD HgCdTe multilayer heterostructures were grown on GaAs substrates. The response time of devices as a function of bias has been measured experimentally by using 10-μm quantum cascade laser and fast oscilloscope with suitable transimpedance amplifier. Results of theoretical predictions are compared with experimental data. It is shown that the response time at weak reverse bias condition is mainly limited by the drift time of carriers moving into π-n+ junction. Using the reverse bias higher than 50 mV, the transit time across the absorber region limits the response time. The response time of small-area devices decreases in the region of week reverse bias achieving value below 1 ns.

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Fundamental physics of infrared detector materials

Cited by 144 publications

References 18 publications

New material systems for third generation infrared photodetectors

New material systems for third generation infrared photodetectors

HgCdTe nanostructures on GaAs and Si substrate for IR and THz radiation detecting

High frequency response of near-room temperature LWIR HgCdTe heterostructure photodiodes

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