Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

Phan, Hoang‐Phuong; Dao, Dzung Viet; Tanner, Philip; Wang, Li; Nguyen, Nam‐Trung; Zhu, Yong; Dimitrijev, Sima

doi:10.1063/1.4869151

Cited by 75 publications

(72 citation statements)

References 23 publications

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“…This effect has been deployed for stress/strain sensing applications known as the piezoresistive, piezojunction, and piezoHall effects. Piezoresistive effects in 3C-SiC have been reported recently in our study [8]- [10]. However, from the viewpoint of electronics device application, these effects cause unwanted errors and long-term instability in the electronic circuit.…”

Section: Introductionsupporting

confidence: 49%

Electrical Properties of p-type 3C-SiC/Si Heterojunction Diode Under Mechanical Stress

Qamar

Tanner

Dao

et al. 2014

IEEE Electron Device Lett.

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The current mechanism and effects of external transverse stress in the [110] orientation on the electrical properties of a single crystal (100) p-3C-SiC/p-Si heterojunction diode are reported for the first time. It has been observed that the current flow in the heterojunction is due to tunneling through the triangular potential barrier formed due to valence band offset between Si and SiC. The applied stress produces small changes in tunneling current when stress is increased from 0 to 308 MPa. The observed increase in current at 0.24 V is 10% at maximum stress of 308 MPa. The increase of tunneling current when applying stress is explained in terms of stress, which alters the out-of-plane effective mass, and the effective tunneling barrier height of holes in top subbands of p-type Si.Index Terms-p-type 3C-SiC/Si heterojunction, tunneling current, strain induced effects.

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Section: Introductionsupporting

confidence: 49%

Electrical Properties of p-type 3C-SiC/Si Heterojunction Diode Under Mechanical Stress

Qamar

Tanner

Dao

et al. 2014

IEEE Electron Device Lett.

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“…Strain sensors have been widely employed in numerous applications including bio-analysis, inertia sensing, and structural health monitoring (SHM) [1][2][3][4] . For instance, in SHM, strain sensors can detect crack generation, delamination between layers, and thermal expansions due to the changes in temperature 5,6 .…”

mentioning

confidence: 99%

Nano strain-amplifier: Making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

Phan

Dinh

Kozeki

et al. 2016

Applied Physics Letters

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This paper presents an innovative nano strain-amplifier employed to significantly enhance the sensitivity of piezoresistive strain sensors. Inspired from the dogbone structure, the nano strain-amplifier consists of a nano thin frame released from the substrate, where nanowires were formed at the centre of the frame. Analytical and numerical results indicated that a nano strain-amplifier significantly increases the strain induced into a free standing nanowire, resulting in a large change in their electrical conductance. The proposed structure was demonstrated in p-type cubic silicon carbide nanowires fabricated using a top down process. The experimental data showed that the nano strain-amplifier can enhance the sensitivity of SiC strain sensors at least 5.4 times larger than that of the conventional structures. This result indicates the potential of the proposed strain-amplifier for ultra-sensitive mechanical sensing applications.Strain sensors have been widely employed in numerous applications including bio-analysis, inertia sensing, and structural health monitoring (SHM)1-4 . For instance, in SHM, strain sensors can detect crack generation, delamination between layers, and thermal expansions due to the changes in temperature 5,6 . Among several methods to detect strain, the piezoresistive effect in semiconductors has been widely adopted due to its high sensitivity and simple readout circuitry 7-10 . Recent studies have been focusing on enhancing the sensitivity of piezoresistive strain sensors by down-scaling piezoresistive elements to a nanometer scale 11 . He and Yang reported a giant longitudinal piezoresistive coefficient of −3550 × 10 −11 Pa −1 in silicon nanowires, which is at least one order of magnitude large than that of bulk Si material 12 . The enhancement of the piezoresistive effect in Si nanowires was hypothesized to be caused by a piezopinch phenomenon 13 . Following the work of He and Yang, a large number of studies have been carried out to investigate the piezoresistive effect of nanowires fabricated using different methods and aligned in several crystallographic orientations. Milner et al. reported the giant piezoresistive effect in Si micro and nano wires fabricated using a topdown process 14 . In addition, the authors also counteracted the hypothesis of the piezopinch phenomenon, and suggested that the dynamic properties of surface charge on micro/nanowires could be the main reason causing the significant change in the piezoresistance of nanowires 11,14 . Nevertheless, the electrical conductance of Si nanowires, using the dynamic properties of surface state, varies with time, which is not a desirable property for practical strain sensing applications. Additionally, in contrast to the results of He and Yang, the piezoresistive effect in both bottom-up grown Si nanowires 15,16 , and top-down fabricated Si 17-19reported recently, did not show significant improvement in sensitivity compared to when bulk materials are used. In another study, Nakamura et al. theoretically investigated the influenc...

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“…Os resultados mostrados na Figura 6 e Figura 7 apresentam um perfil muito semelhante aos apresentados por [6], para filmes de 3C-SiC. Portanto; o método de análise empregado, neste trabalho, permite obter os coeficientes piezoresistivos de forma satisfatória.…”

Section: Resultados E Simulaçõesunclassified

Análise dos Coeficientes Piezoresistivos Fundamentais do Silício Policristalino

Rasia¹,

Geremias²,

Valdiero³

2016

Proceeding Series of the Brazilian Society of Computational and Applied Mathematics

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Resumo. Neste trabalho são mostrados os coeficientes piezoresistivos longitudinal, transversal e de cisalhamento para filmes finos de silício policristalino tipo N e tipo P obtidos por simulação matemática. Estes coeficientes foram avaliados considerando o plano (100) e usando soluções analíticas estabelecidas para diafragmas circulares. Com base nos coeficientes piezoresistivos fundamentais, o efeito piezoresistivo em uma orientação cristalográfica arbitrária pode ser estimado. Este efeito desempenha um papel importante para o cálculo da sensibilidade dos elementos sensores quando se projeta piezoresistores de filmes finos que usam o silício como substrato.

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Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

Cited by 75 publications

References 23 publications

Electrical Properties of p-type 3C-SiC/Si Heterojunction Diode Under Mechanical Stress

Electrical Properties of p-type 3C-SiC/Si Heterojunction Diode Under Mechanical Stress

Nano strain-amplifier: Making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

Análise dos Coeficientes Piezoresistivos Fundamentais do Silício Policristalino

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