2007
DOI: 10.1116/1.2812430
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Fundamental reliability of 1.5-nm-thick silicon oxide gate films grown at 150°C by modified reactive ion beam deposition

Abstract: The reliability of 1.5-nm-thick silicon oxide gate films grown at 150°C by modified reactive ion beam deposition (RIBD) with in situ pyrolytic-gas passivation (PGP) using N2O and NF3 was investigated. RIBD uses low-energy-controlled reactive, ionized species and potentializes low-temperature film growth. Although the oxide films were grown at a low temperature of 150°C, their fundamental indices of reliability, such as the time-dependent dielectric breakdown lifetime and interface state density, were almost eq… Show more

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