Fundamental structure forming phenomena of polycrystalline films and the structure zone models

Barna, P.B.; Adamik, M.

doi:10.1016/s0040-6090(97)00503-8

Cited by 667 publications

(331 citation statements)

References 30 publications

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“…10(a) for CrN films]. 31,91,119 Growth of films using HiPIMS is characterized by high ionic fluxes to the substrate (up to several hundreds of milliamperes per square centimeter) of relatively low energies (several tens of electronvolts), as was discussed in Section II B. These growth conditions trigger and/or enhance surface diffusion leading to film densification 31,123 as shown in Fig.…”

Section: B Phase Composition Tailoring By Hipimsmentioning

confidence: 99%

“…113,114 C. Control of film microstructure and interface engineering Polycrystalline films grown by PVD techniques exhibit a variety of microstructures with respect to the size, the morphology, and the relative orientation of the crystallites. 91,119 These features have, for instance, implications for the mechanical strength 120 and the electrical conductivity 94,95,121 of the film. The microstructure is determined primarily by surface and bulk diffusion processes, 91,119 which are controlled by the deposition temperature, the bombardment by energetic species, and the incorporation of impurities that act as inhibitors for the crystal and grain growth.…”

Section: B Phase Composition Tailoring By Hipimsmentioning

confidence: 99%

“…91,119 These features have, for instance, implications for the mechanical strength 120 and the electrical conductivity 94,95,121 of the film. The microstructure is determined primarily by surface and bulk diffusion processes, 91,119 which are controlled by the deposition temperature, the bombardment by energetic species, and the incorporation of impurities that act as inhibitors for the crystal and grain growth. 91,119,122 Deposition at relatively low temperatures (typically lower than 0.4T m , where T m is the melting temperature of the deposited material) using state-of-the-art sputtering techniques allows only for surface diffusion to be activated leading to the formation of films with a columnar microstructure and intercolumnar porosity [see Fig.…”

Section: B Phase Composition Tailoring By Hipimsmentioning

confidence: 99%

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An introduction to thin film processing using high-power impulse magnetron sputtering

2012

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High-power impulse magnetron sputtering (HiPIMS) is a promising sputtering-based ionized physical vapor deposition technique and is already making its way to industrial applications. The major difference between HiPIMS and conventional magnetron sputtering processes is the mode of operation. In HiPIMS the power is applied to the magnetron (target) in unipolar pulses at a low duty factor (andlt;10%) and low frequency (andlt;10 kHz) leading to peak target power densities of the order of several kilowatts per square centimeter while keeping the average target power density low enough to avoid magnetron overheating and target melting. These conditions result in the generation of a highly dense plasma discharge, where a large fraction of the sputtered material is ionized and thereby providing new and added means for the synthesis of tailor-made thin films. In this review, the features distinguishing HiPIMS from other deposition methods will be addressed in detail along with how they influence the deposition conditions, such as the plasma parameters and the sputtered material, as well as the resulting thin film properties, such as microstructure, phase formation, and chemical composition. General trends will be established in conjunction to industrially relevant material systems to present this emerging technology to the interested reader.Funding Agencies|Swedish Research Council (VR)|623-2009-7348

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Section: B Phase Composition Tailoring By Hipimsmentioning

confidence: 99%

Section: B Phase Composition Tailoring By Hipimsmentioning

confidence: 99%

Section: B Phase Composition Tailoring By Hipimsmentioning

confidence: 99%

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An introduction to thin film processing using high-power impulse magnetron sputtering

2012

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“…These facets have been suggested to facilitate growth of AlSn alloy films on weakly interacting substratesincluding amorphous-C, SiO 2 , NaCl, and mica [3,[45][46][47]-by providing pathways for accelerated mass transport between the base and the upper layer of 3D atomic islands. Moreover, facet formation has been experimentally observed during the deposition of metal films on graphene and graphite surfaces [4,32].…”

Section: Introductionmentioning

confidence: 99%

Formation and morphological evolution of self-similar 3D nanostructures on weakly interacting substrates

Lü

Almyras

Gervilla

et al. 2018

Phys. Rev. Materials

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Vapor condensation on weakly interacting substrates leads to the formation of three-dimensional (3D) nanoscale islands (i.e., nanostructures). While it is widely accepted that this process is driven by minimization of the total film/substrate surface and interface energy, current film-growth theory cannot fully explain the atomic-scale mechanisms and pathways by which 3D island formation and morphological evolution occurs. Here, we use kinetic Monte Carlo simulations to describe the dynamic evolution of single-island shapes during deposition of Ag on weakly interacting substrates. The results show that 3D island shapes evolve in a self-similar manner, exhibiting a constant height-to-radius aspect ratio, which is a function of the growth temperature. Furthermore, our results reveal the following chain of atomic-scale events that lead to compact 3D island shapes: 3D nuclei are first formed due to facile adatom ascent at single-layer island steps, followed by the development of sidewall facets bounding the islands, which in turn facilitates upward diffusion from the base to the top of the islands. The limiting atomic process which determines the island height, for a given number of deposited atoms, is the temperature-dependent rate at which adatoms cross from sidewall facets to the island top. The overall findings of this study provide insights into the directed growth of metal nanostructures with controlled shapes on weakly interacting substrates, including two-dimensional crystals, for use in catalytic and nanoelectronic applications.

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“…[7]) with mixed c-TiN and w-AlN structure and crossover in the c-TiN texture. We intend to collect the basic characteristics of the structure, necessary to identify the fundamental phenomena of structure formation, operating during the structure evolution and their pathway in dependence of the deposition parameters [14,15]. First of all we intended to understand in which stage of structure evolution and by which mechanism are the phases developing.…”

Section: Introductionmentioning

confidence: 99%

Crossover of texture and morphology in (Ti1−xAlx)1−yYyN alloy films and the pathway of structure evolution

Székely

Sáfrán

Kis

et al. 2014

Surface and Coatings Technology

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In our earlier published work, we have shown that there is a composition range of the (Ti 1 − x Al x ) 1 − y Y y N alloy films (0.72 b Ti/Al b 0.88) deposited at oblique vapour beam incidence and 500°C (corresponding to zone T) in which mixed cubic TiN (c-TiN) and wurtzite AlN (w-AlN) structures were formed together with an unusual complex texture. The texture of c-TiN phase changed from 〈001〉 to b111N at a certain thickness forming a definite crossover. Moreover the c-TiNb111N and the w-AlN〈0001〉 crystals were epitaxially related with axes tilted to the direction of the vapour beam. Based on a comprehensive transmission electron microscopy (TEM) and diffraction (XRD and selected area electron diffraction (SAED)) structure and morphology analysis, we discovered the details of this exotic structure making it possible to construct the complex pathway of structure evolution including the formation of the w-AlN phase and the change of the dominating texture of c-TiN phase with thickness in dependence of the Ti/Al ratio and the deposition parameters. This pathway could be deduced from the fundamental phenomena of structure formation and may be generalised for multi-component thin film systems. A composition structure zone model has been also proposed for the (Ti 1 − x Al x ) 1 − y Y y N thin film system in the 0 b x b 1 composition range.

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Fundamental structure forming phenomena of polycrystalline films and the structure zone models

Cited by 667 publications

References 30 publications

An introduction to thin film processing using high-power impulse magnetron sputtering

An introduction to thin film processing using high-power impulse magnetron sputtering

Formation and morphological evolution of self-similar 3D nanostructures on weakly interacting substrates

Crossover of texture and morphology in (Ti1−xAlx)1−yYyN alloy films and the pathway of structure evolution

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