Fundamental studies on large area Cu(In,Ga)Se2 films for high efficiency solar cells

Hermann, A. M.; González, Claudia Beatriz; Ramakrishnan, P.A.; Balzar, Davor; Popa, Nicolæ; Rice, Philip M.; Marshall, Charles A.; Hilfiker, James N.; Tiwald, Thomas E.; Sebastian, P.J.; Calixto, M. E.; Bhattacharya, R. N.

doi:10.1016/s0927-0248(01)00076-9

Cited by 50 publications

(21 citation statements)

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“…Recently, conversion coefficients up to 19.2% were reported [6] for Cu(In,Ga)Se 2 based solar cells. Generally, solar cells based on Cu(In,Ga)Se 2 polycrystalline films grown by Physical Vapor Deposition (PVD) find applications as low-cost and high-efficiency photovoltaic devices [7][8][9]. Highefficiency CIGS devices have a typical [Ga]/([In] + [Ga]) ratio x of 0.1-0.3 and a band gap energy E g between 1.1 and 1.2 eV.…”

Section: Introductionmentioning

confidence: 99%

Structural properties of chalcopyrite thin films studied by Raman spectroscopy

Papadimitriou

Esser²,

Chen

2005

Physica Status Solidi (b)

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PACS 68.55. Jk, 78.30.Hv, 78.55.Hx This paper reviews the structural properties of ternary chalcopyrite absorbers for solar-cell device applications studied by Raman Spectroscopy. Raman mode assignment in CuGaSe 2 is reviewed according to the results of previous and present Raman and IR spectroscopic studies. The compositional dependence of Raman modes, in particular, the composition dependent frequency shift of the A 1 -mode, is suggested for the analysis of the chalcopyrite film structure. Order and disorder effects are discussed with reference to the excitation of phonon modes assigned to Cu -Au ordered phases and to defect related phases, respectively. Phase separation effects associated with the formation of secondary microcrystalline Cu x Se-or Cu x S-phases and the observation of Raman scattering from these phases are also discussed.

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Section: Introductionmentioning

confidence: 99%

Structural properties of chalcopyrite thin films studied by Raman spectroscopy

Papadimitriou

Esser²,

Chen

2005

Physica Status Solidi (b)

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“…The ITO layer is modelled with two classical oscillators: a Lorentz oscillator to describe the electronic transition, and a Drude oscillator (Lorentz oscillator with zero energy) to describe the free carrier absorption. The CdS layer is modelled with two oscillators: a Lorentz oscillator to describe the optical transitions at higher energies, and gaussian broadened polynomial superposition (GBPS) semiconductor oscillators 52 to describe the fundamental optical transitions. The optical model also consists of an intermixed layer and surface roughness layer, which are modelled with a Bruggemann 49 EMA.…”

Section: Spectroscopic Ellipsometrymentioning

confidence: 99%

Physical characterization of thin‐film solar cells

Durose¹,

Asher²,

Jaegermann³

et al. 2004

Progress in Photovoltaics

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The principal techniques used in the physical characterization of thin-film solar cells and materials are reviewed, these being scanning probe microscopy (SPM), X-ray diffraction (XRD), spectroscopic ellipsometry, transmission electron microscopy (TEM), Auger electron spectroscopy (AES), secondary-ion mass spectrometry (SIMS), X-ray photoelectron spectroscopy (XPS), photoluminescence and timeresolved photoluminescence (TRPL), electron-beam-induced current (EBIC) and light-beam-induced current (LBIC). For each method the particular applicability to thin-film solar cells is highlighted. Examples of the use of each are given, these being drawn from the chalcopyrite, CdTe, Si and III-V materials systems.

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“…The highest efficiency of CuInGaSe 2 based solar cell *20.8 %, has been reported using the coevaporation of Cu, In, Ga and Se [3]. Various methods have been used for the deposition of CISe and CIS thin films such as, molecular beam epitaxy [4], chemical bath deposition [5], physical vapor deposition [6], spray pyrolysis [7], sputtering [8,9], electrodeposition [10] etc. Among these techniques an electrodeposition (ED) is one of the low-cost techniques with numerous advantages, become the promising method for preparation of photovoltaic solar cells [10,11].…”

Section: Introductionmentioning

confidence: 99%

Selenization of electrodeposited copper–indium alloy thin films for solar cell applications

Londhe

Rohom

Chaure

2014

J Mater Sci: Mater Electron

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Copper-Indium (Cu-In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu-In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu-In alloy was found to be in the range -0.70 to -0.85 V versus Ag/AgCl reference electrode. Polycrystalline Cu x In y thin films were electrodeposited from aqueous bath at room temperature and 45°C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu-In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of CuIn were selenized in a homemade tubular furnace at 400°C, which reveals the formation of polycrystalline CuInSe 2 (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated *1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density-voltage (J-V) was observed for Cu-In alloy thin films whereas, the selenized Cu-In alloy films (CISe) possess rectifying properties.

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Fundamental studies on large area Cu(In,Ga)Se2 films for high efficiency solar cells

Cited by 50 publications

References 5 publications

Structural properties of chalcopyrite thin films studied by Raman spectroscopy

Structural properties of chalcopyrite thin films studied by Raman spectroscopy

Physical characterization of thin‐film solar cells

Selenization of electrodeposited copper–indium alloy thin films for solar cell applications

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