Fundamentals for the formation and structure control of thin films

Kumomi, Hideya; Shi, Frank G.

doi:10.1016/b978-012512908-4/50009-6

Cited by 3 publications

(5 citation statements)

References 291 publications

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“…Ref. [12], [13] and references therein), our solution departs from those found elsewhere in several respects. One of them is the presence of the cutoffs at low and high grain sizes in Eqs.…”

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confidence: 52%

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On the origin of logarithmic-normal distributions: An analytical derivation, and its application to nucleation and growth processes

Bergmann

Bill

2008

Journal of Crystal Growth

113

102

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The logarithmic-normal (lognormal) distribution is one of the most frequently observed distributions in nature and describes a large number of physical, biological and even sociological phenomena. The origin of this distribution is therefore of broad interest but a general derivation from basic principles is still lacking. Using random nucleation and growth to describe crystallization processes we derive the time development of grain size distributions. Our derivation provides, for the first time, an analytical expression of the size distribution in the form of a lognormal type distribution. We apply our results to the grain size distribution of solid phase crystallized Si-films. The logarithmic-normal (lognormal) size distribution is one of the most frequently encountered distributions in nature [1,2]. It has been shown early on that a large number of technical processes and even sociological phenomena such as income distributions [2] or the productivity of researchers [3] follow

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confidence: 52%

“…[12] for aerosols and an overview on the development of size distributions in crystallization processes can be found in Ref. [13]. Furthermore, there are numerical approaches describing the size distributions e.g.…”

mentioning

confidence: 99%

On the origin of logarithmic-normal distributions: An analytical derivation, and its application to nucleation and growth processes

Bergmann

Bill

2008

Journal of Crystal Growth

113

102

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“…Nucleation at random surface locations can be expected to lead to a resultant film grain size with a large standard deviation, which is similar to the observed behavior of PEALD Cu films without a plasma pretreatment. However, if nucleation sites are more periodically arranged, or more homogenous, a narrower grain size distribution can be expected, which is observed for PEALD Cu film with plasma pretreatment (19). A smaller grain size and narrower grain size distribution suggest that Cu has a high nucleation density and more homogenous nucleation sites during growth.…”

Section: Effects Of Hydrogen Plasma Pretreatmentsmentioning

confidence: 98%

“…Substrate plasma pretreatments lower the average Cu grain size and reduce the grain size distribution. It can be assumed that Cu grain size is determined by the location of the grain boundaries where the growth fronts of adjacent grains meet, if grains grow at a homogenous rate ( 19 ). It is generally observed that grain size is nucleation density dependent, whereby a higher nucleation density leads to smaller average grain size (20,21,22).…”

Section: Effects Of Hydrogen Plasma Pretreatmentsmentioning

confidence: 99%

Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers

Zeng

Eisenbraun

2007

ECS Trans.

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A promising plasma enhanced atomic layer deposition (PEALD) Cu process has been developed, and PEALD Cu layers have been investigated for use in multilevel damascene metallization. Continuous and conformal PEALD Cu layers as thin as 12 nm were deposited on blanket and high aspect ratio patterned substrates. The effects of hydrogen plasma pretreatments on the material and integration properties of the PEALD Cu process have been studied. Plasma pretreatments were observed to improve Cu nucleation and enable lower Cu resistivity and surface roughness. Void-free electrochemically deposited Cu fill was achieved on PEALD Cu-seeded high aspect ratio via structures. The plated Cu films possess a strong (111) texture inherited from the PEALD Cu seed layer.

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“…This is conducive to film delamination or cracking, especially if the coatings are heavily mechanically or thermally loaded, which degrade their efficiency in protecting a substrate material. In order to minimize these effects and improve the film performance for a given application, completely new multiphase structures have been developed [9][10][11][12] and well established traditional coatings have been synthesized under optimized deposition conditions [13][14][15] or designed with an interlayer of a specific thickness [16,17] with respect to their microstructure and stress level.…”

Section: Introductionmentioning

confidence: 99%

Texture development in polycrystalline CrN coatings: the role of growth conditions and a Cr interlayer

Daniel

Martinschitz

Keckes

et al. 2009

J. Phys. D: Appl. Phys.

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The control of the texture of transition-metal nitride coatings by varying the energy of incident ions and the coating thickness and by introducing a highly textured interlayer was demonstrated on polycrystalline CrN coatings grown by reactive magnetron sputtering. Development of the preferred (1 1 1) orientation was observed at moderate ion bombardment as the adatom net flux from the (2 0 0) to (1 1 1)-oriented grains dominated. A reversal of this flux at higher ion energies associated with collisional dissociation of ions at the film surface resulted in the development of a (2 0 0) texture. Coatings composed of grains with mixed (2 0 0) and (2 2 0) orientations were developed under intense ion bombardment due to preferential re-sputtering. The preferred orientation also changes with increasing coating thickness from (2 0 0) towards (1 1 1) through competitive growth. In contrast, a complete (2 0 0)-oriented structure of the CrN layer is formed when it is grown on a Cr interlayer with strong preferred (2 0 0) orientation.

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Fundamentals for the formation and structure control of thin films

Cited by 3 publications

References 291 publications

On the origin of logarithmic-normal distributions: An analytical derivation, and its application to nucleation and growth processes

On the origin of logarithmic-normal distributions: An analytical derivation, and its application to nucleation and growth processes

Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers

Texture development in polycrystalline CrN coatings: the role of growth conditions and a Cr interlayer

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