Fundamentals of Electron Beam Exposure and Development

Mohammad, Mohammad Ali; Muhammad, Mustafa; Dew, S. K.; Stepanova, Maria

doi:10.1007/978-3-7091-0424-8_2

Cited by 62 publications

(44 citation statements)

References 67 publications

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“…Besides, the high N-SD value given by the 200 nm patterning, means that there are other aspects of the process, like the resist spinning, developing time and temperature, ecc. [29], that have to be carefully optimized in order to obtain more high aspect ratio. So, after these outcomes, we have performed a second writing cycle for investigating structures with higher thickness (Fig.…”

Section: Resultsmentioning

confidence: 99%

“…In fact, Mohammad et al [29] reports in their work that this parameter can affects the sensitivity of the e-resist, the exposure window and, above all, the ultimate resolution of the e-resist. For this reason, it has been necessary to investigate the same ADr with different development times, respectively, 40 s and 150 s. Looking at the graph in Figure 7, it can be observed how dramatically development time influences the reproducibility of the lithography.…”

Section: Resultsmentioning

confidence: 99%

“…In fact, a lower time respect the 75 s could create underexposed resist with irregular shapes. Instead, developing with higher times, the final width can be seriously modified by the solvent, because it could attack also the unexposed areas [29]. …”

Section: Resultsmentioning

confidence: 99%

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Dose influence on the PMMA e-resist for the development of high-aspect ratio and reproducible sub-micrometric structures by electron beam lithography

Veroli

Mura

Balucani

et al. 2016

AIP Conference Proceedings

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In this work, a statistical process control method is presented showing the accuracy and the reliability obtained with of PMMA E-resist AR-P 672, using an Elphy Quantum Electron Beam Lithography module integrated on a FE-SEM Zeiss Auriga instrument. Reproducible nanostructures with an high aspect ratio between e-resist thickness and width of written geometric structure are shown. Detailed investigation of geometry features are investigated with dimension in the range of 200nm to 1-m. The adopted method will show how tuning the Area Dose factor and the PMMA thickness it was possible to determine the correct and reproducible parameters that allows to obtain well defined electron-beam features with a 4:1 aspect ratio. Such high aspect ratio opens the possibility to realize an electron-beam lithography lift-off process by using a standard e-beam resist. © 2016 Author(s)

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Dose influence on the PMMA e-resist for the development of high-aspect ratio and reproducible sub-micrometric structures by electron beam lithography

Veroli

Mura

Balucani

et al. 2016

AIP Conference Proceedings

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“…The goal is to transfer a pattern to a thin layer of material Figure 2, consists of an electron beam which exposes the resist material laid on a substrate. The resist consists of a polymer which is sensitive to electron beam exposure [108]. The EBL process consists of two main phases.…”

Section: Electron Beam Lithographymentioning

confidence: 99%

Length scale and manufacturability in density-based topology optimization

2016

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Since its original introduction in structural design, density based topology optimization has been applied to a number of other fields like microelectromechanical systems, photonics, acoustics and fluid mechanics. The methodology has been well accepted in industrial design processes where it can provide competitive designs in terms of cost, materials and functionality under a wide set of constraints. However, the optimized topologies are often considered as conceptual due to loosely defined topologies and the need of post processing. Subsequent amendments can affect the optimized design performance and in many cases can completely destroy the optimality of the solution. Therefore, the goal of this paper is to review recent advancements in obtaining manufacturable topology optimized designs. The focus is on methods for imposing minimum and maximum length scale, and ensuring manufacturable, well defined designs with robust performances. The overview discusses the limitations, the advantages and the associated computational costs. The review is completed with optimized designs for minimum compliance, mechanism design and heat transfer.

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“…proximity effects may change the actual feature size 19 . Moreover, for non-round defects, the feature broadening will impact the actual aspect ratio of the realized defects.…”

Section: Validation Of Rn31 and Rn39 Signal Strengths By Benchmarkimentioning

confidence: 99%

Deep sub-wavelength metrology for advanced defect classification

et al. 2017

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Particle defects are important contributors to yield loss in semi-conductor manufacturing. Particles need to be detected and characterized in order to determine and eliminate their root cause. We have conceived a process flow for advanced defect classification (ADC) that distinguishes three consecutive steps; detection, review and classification. For defect detection, TNO has developed the Rapid Nano (RN3) particle scanner, which illuminates the sample from nine azimuth angles. The RN3 is capable of detecting 42 nm Latex Sphere Equivalent (LSE) particles on XXX-flat Silicon wafers. For each sample, the lower detection limit (LDL) can be verified by an analysis of the speckle signal, which originates from the surface roughness of the substrate. In detection-mode (RN3.1), the signal from all illumination angles is added. In review-mode (RN3.9), the signals from all nine arms are recorded individually and analyzed in order to retrieve additional information on the shape and size of deep sub-wavelength defects. This paper presents experimental and modelling results on the extraction of shape information from the RN3.9 multi-azimuth signal such as aspect ratio, skewness, and orientation of test defects.Both modeling and experimental work confirm that the RN3.9 signal contains detailed defect shape information. After review by RN3.9, defects are coarsely classified, yielding a purified Defect-of-Interest (DoI) list for further analysis on slower metrology tools, such as SEM, AFM or HIM, that provide more detailed review data and further classification. Purifying the DoI list via optical metrology with RN3.9 will make inspection time on slower review tools more efficient.

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Fundamentals of Electron Beam Exposure and Development

Cited by 62 publications

References 67 publications

Dose influence on the PMMA e-resist for the development of high-aspect ratio and reproducible sub-micrometric structures by electron beam lithography

Dose influence on the PMMA e-resist for the development of high-aspect ratio and reproducible sub-micrometric structures by electron beam lithography

Length scale and manufacturability in density-based topology optimization

Deep sub-wavelength metrology for advanced defect classification

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