Fundamentals of Power Semiconductor Devices

Abstract

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Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

“…4H-SiC 9.7 [90] 980 [90] 3.1 [213] 370 [90] In general, for UWBG materials to have impact on these applications, vertical device structures [90,214,215] similar to those utilized today for Si and SiC will need to be developed. While lateral UWBG devices such as HEMTs or MESFETs may be quite useful for high-frequency switching applications (and preliminary devices of this type have been realized in the AlGaN [157] and (AlGa) 2 O 3 [216] systems), lateral devices will likely be less useful for very high-voltage (defined somewhat arbitrarily as >5 kV) applications.…”

Research on current sharing of paralleled IGBTs in different DC breaker circuit topologies

“…1. The device can be seen as a voltage-controlled current source and an equivalent resistance r, together with parasitic capacitances, inductances and resistances [20]. The IGBT switching process can be divided into the steady state and the transient.…”

A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations

“…Because trench-gate structure can reduce on-state voltage drop comparing with a planar-gate IGBT under the same blocking voltage capability, especially for devices with high switching speed [19].…”