Fundamentals of Power Semiconductor Devices

Abstract

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The implementation of AFM for process monitoring and metrology in trench MOSFET device manufacturing

“…Gate S Drain Figure 2: A cross-sectional diagram of a Trench Power MOSFET device [4]. Therefore, control of these processes are critical an1 thus require monitoring and SPC control, preferably via an inline, real-time, non-destructive method.…”

“…This is especially key for implementation in high volume trench device manufacturing where the trench depth and contour are two of the most significant characteristics. The cross sectional diagram of the trench power MOSFET device seen in figure 2 illustrates the fact that the trench depth, contour, and fill are crucial to device yield and parametric performance [4].…”

Characterization of 1200 V trench IGBT using local lifetime control for clamped inductive load under extensive measurements without freewheeling diode reverse recovery influence

“…Widely used for the medium voltage and medium current applications range (300-2500V / 50-200A), it allows a good trade-off between the switching speed, the on-state voltage drop and the ruggedness [3]. Nowadays, the trench technology is also available for the IGBT devices [4]. In the early 90s, some prototypes of 600V Trench (T) IGBT were developed and experimentally compared to Planar (P) device [5].…”

Stored charge control of P-i-N diodes: a simulation approach

“…The P--P' interface produces an 'ohmic' contact for majority carriers. The P--P' contact creates and electric field due to the concentration gradient [3]:…”

“…Consequently, the implementation of new circuit topologies and a tremendous increase in switching frequency to meet new limits, have been the driving factors in the development of new semiconductor devices such as power MOSFETs [I], insulated gate bipolar transistors (IGBTs) [2], the family of MOS-gated thyristors, and power field-controlled diodes (FCD) [3]. As a consequence, other devices, in particular the P-i-Nbased rectifier structure (usually called first recovery diode, FRD), became the weakest members of power circuits, and very often power circuits performance is limited by the power rectifier.…”