Fundamentals of Solid-State Lasers

Iffländer, Reinhard

doi:10.1007/978-3-540-46585-0_1

Cited by 1 publication

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“…If we also take into account reflection at the metallic surface, 170 J/mm³ are required [29]. This fits very well to the value of 260 J/mm³ [19] which is needed for P1 front side ablation by direct laser ablation indicating a purely thermal process.…”

Section: Discussionmentioning

confidence: 81%

Monolithic interconnection of CIGSSe solar cells by picosecond laser structuring

et al. 2010

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We report on the selective structuring of CIS (Cu(In,Ga)(S,Se) 2 ) thin film solar cells applying picosecond lasers at 1064 nm. For a monolithic serial interconnection the thin layers are selectively separated by so called laser patterns 1, 2 and 3 (P1, P2 and P3). We demonstrate that the half micron thick molybdenum back electrode can be structured with a P1 process speed of more than 4 m/s without detectable residues and damages by direct induced laser ablation from the back side. A CIS layer (~2 µm thickness) is structured by standard direct laser ablation at higher energy densities and a process speed up to 200 mm/s. A 1.5 µm thick ZnO front electrode layer can be line separated with P3 speed up to several 1000 mm/s by indirect induced laser ablation. We demonstrate that direct induced (P1) and indirect induced (P3) picosecond laser ablation are not purely thermal processes working at energy densities far below the evaporation enthalpy. To increase the scribing speed elliptical and rectangular beam profiles were investigated. Validation of the processes for functionality within a CIS solar cell will be presented.

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Section: Discussionmentioning

confidence: 81%