Fundamentals of surface and thin film analysis

Feldman, L. C.; Mayer, J. W.; Grasserbauer, M.

doi:10.1016/s0003-2670(00)82855-x

Cited by 246 publications

(225 citation statements)

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“…This reveals preferential sputtering of Zn, contrary to the preferential sputtering of Al that is usually seen in Al-rich quasicrystals and which is attributed to optimal energy transfer between the sputtering gas and an Al atom, compared with other kinds of metal atoms in the alloys [16]. However, it is known that weak bonding also favors preferential sputtering [17]. Since Zn is a poorer mass-match than Al, its preferential sputtering most likely reflects weaker bonding in the solid.…”

Section: Experimental Results and Interpretationmentioning

confidence: 88%

Weak bonding of Zn in an Al-based approximant based on surface measurements

Yuen

Ünal

Jing

et al. 2010

Philosophical Magazine

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We have studied two surfaces of a new Al-Pd-Zn approximant using mass spectrometry, X-ray photoemission spectroscopy (XPS) and scanning tunneling microscopy (STM). Zn is bonded weakly in this approximant, perhaps as weakly as in elemental Zn. This is based upon three observations: (1) the low vapor pressure of Zn above the approximant (detectable in the gas phase at 600 K), (2) preferential sputtering of Zn (contrary to the usual preferential sputtering of Al in Al-rich quasicrystals), and (3) preferential surface segregation of Zn. We further show that preferential segregation -and perhaps incipient evaporation -causes the surface to roughen, preventing it from forming a terrace-step morphology. Finally, our data show that at low O2 pressures, Al oxidizes. In air, Zn oxidizes as well. All results and conclusions are similar for the two-fold and pseudo-10-fold surfaces. RightsThis article is (co-)authored by an employee of the United States Government and is not subject to copyright in the United States (17 U.S.C. §105). Full terms and conditions of use: http://www.informaworld.com/terms-and-conditions-of-access.pdf This article may be used for research, teaching and private study purposes. Any substantial or systematic reproduction, re-distribution, re-selling, loan or sub-licensing, systematic supply or distribution in any form to anyone is expressly forbidden.The publisher does not give any warranty express or implied or make any representation that the contents will be complete or accurate or up to date. The accuracy of any instructions, formulae and drug doses should be independently verified with primary sources. The publisher shall not be liable for any loss, actions, claims, proceedings, demand or costs or damages whatsoever or howsoever caused arising directly or indirectly in connection with or arising out of the use of this material. We have studied two surfaces of a new Al-Pd-Zn approximant using mass spectrometry, X-ray photoemission spectroscopy (XPS) and scanning tunneling microscopy (STM). Zn is bonded weakly in this approximant, perhaps as weakly as in elemental Zn. This is based upon three observations: (1) the low vapor pressure of Zn above the approximant (detectable in the gas phase at 600 K), (2) preferential sputtering of Zn (contrary to the usual preferential sputtering of Al in Al-rich quasicrystals), and (3) preferential surface segregation of Zn. We further show that preferential segregation -and perhaps incipient evaporation -causes the surface to roughen, preventing it from forming a terrace-step morphology. Finally, our data show that at low O 2 pressures, Al oxidizes. In air, Zn oxidizes as well. All results and conclusions are similar for the two-fold and pseudo-10-fold surfaces. Philosophical MagazineVol. 91, Nos. 19-21, 1-21 July 2011, 2879-

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Section: Experimental Results and Interpretationmentioning

confidence: 88%

Weak bonding of Zn in an Al-based approximant based on surface measurements

Yuen

Ünal

Jing

et al. 2010

Philosophical Magazine

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“…These energies are typical for ion irradiation of materials, and are well known to form heat spikes that can cause massive atom redistribution and relocation, sometimes resulting in cratering. 15,36 The other important result obtained from the PIC simulations is that the ion flux is very high, the total flux ⌫ of both ions and neutrals over all energies being almost ϳ10 25 ions/ cm 2 / s. This flux obtained from PIC may seem very high compared to typical ion irradiation fluxes which are 5-15 orders of magnitude lower 42,43 but a simple estimate from experimental values of the typical currents in arcs on the order of I = 10 A and final crater areas on the order of A = ͑10 m͒ 2 ͑Ref. 3͒ gives a comparable flux of I / e / A =6 ϫ 10 25 ions/ cm 2 / s ͑e is the electron charge͒.…”

Section: Resultsmentioning

confidence: 93%

Mechanism of surface modification in the plasma-surface interaction in electrical arcs

et al. 2010

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Electrical sparks and arcs are plasma discharges that carry large currents and can strongly modify surfaces. This damage usually comes in the form of micrometer-sized craters and frozen-in liquid on the surface. Using a combination of experiments, plasma and atomistic simulation tools, we now show that the observed formation of deep craters and liquidlike features during sparking in vacuum is explained by the impacts of energetic ions, accelerated under the given conditions in the plasma sheath to kiloelectron volt energies, on surfaces. The flux in arcs is so high that in combination with kiloelectron volt energies it produces multiple overlapping heat spikes, which can lead to cratering even in materials such as Cu, where a single heat spike normally does not.

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“…15 The hydrogen and carbon content of the films have been determined with elastic recoil detection analysis ͑ERDA͒ in combination with Rutherford backscattering ͑RBS͒. 16,17 The optical band gap has been obtained with transmission experiments in the range from 400 to 900 nm. 8 These are all standard techniques.…”

Section: Film Analysismentioning

confidence: 99%

Optical and mechanical properties of plasma-beam-deposited amorphous hydrogenated carbon

Gielen

Kleuskens

Sanden

et al. 1996

Journal of Applied Physics

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Amorphous hydrogenated carbon films have been deposited on crystalline silicon and on glass from an expanding thermal plasma. Two deposition parameters have been varied: the electric current through the plasma source and the admixed acetylene flow. No energetic ion bombardment has been applied during deposition. Ex situ analysis of the films yields the infrared refractive index, hardness, Young's modulus, optical band gap, bonded hydrogen content, and the total hydrogen and mass density. The infrared refractive index describes the film properties independent of which plasma deposition parameter ͑arc current or acetylene flow͒ has been varied. The hardness, Young's modulus, sp 2 /sp 3 ratio, and mass density increase with increasing refractive index. The optical band gap and hydrogen content of the films decrease with increasing refractive index. It is demonstrated that plasma-beam-deposited diamondlike a-C:H has similar properties as material deposited with conventional plasma-enhanced chemical-vapor-depositions techniques under energetic ion bombardment.

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Fundamentals of surface and thin film analysis

Cited by 246 publications

References 0 publications

Weak bonding of Zn in an Al-based approximant based on surface measurements

Weak bonding of Zn in an Al-based approximant based on surface measurements

Mechanism of surface modification in the plasma-surface interaction in electrical arcs

Optical and mechanical properties of plasma-beam-deposited amorphous hydrogenated carbon

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