Fundamentals of the CdTe synthesis

Triboulet, R.

doi:10.1016/j.jallcom.2003.06.006

Cited by 22 publications

(11 citation statements)

References 13 publications

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“…The different ways to achieve liquid, vapour, solution or even solid synthesis of CdTe have been recently reexamined from a thermodynamic point of view, stressing the catalytic character of the reactions of formation [7].…”

Section: Cdte Crystal Growth Versus Cd-te Chemical Bond Characteristicsmentioning

confidence: 99%

Fundamentals of the CdTe and CdZnTe bulk growth

Triboulet

2005

phys. stat. sol. (c)

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The CdTe and CdZnTe growth are reviewed. After presenting briefly the most recent results concerning the phase equilibria in the Cd-Te system, the impact of the characteristics of the Cd-Te chemical bond on the CdTe crystal growth are discussed. The behaviour of Zn alloying in CdTe is then presented at macroscopic and microscopic scale. Furthermore, the strains introduced by the Zn segregation in the alloys are estimated and shown close to the CZT CRSS. Some improvements in the CZT growth are finally presented and discussed: the adjustment of the CZT stoichiometry, the Zn concentration uniformity issue and the strain issue in the alloys which can be overcome by microgravity growth, self-seeding from a free liquid surface, solid state recrystallization and/or dewetting.1I ntroduction CdTe has attracted great interest and found several industrial applications since now forty years. It shows unique properties making it important and very suitable for several applications like photovoltaic conversion, nuclear detection, application for which it has a tremendous potential, mainly for medical purposes, high performance electro-optic modulators and photorefractive devices. It presents both types of conductivity making diode technology and field effect transistors possible. CdTe-based semimagnetics, like CdMnTe, display extremely exciting properties which have not been so far completely exploited. Furthermore, CdZnTe is used as a substrate for the epitaxial deposition of HgCdTe layers.In view of all these applications, considerable efforts have been dedicated since more than forty years to the crystal growth of CdTe which will be reviewed in close relationship with its intrinsic properties, mainly those that come directly from the characteristics of the Cd-Te chemical bond.2P hase equilibria in the Cd-Te system Crystal growth of CdTe requires precise knowledge of the existence regions of the solid, liquid and gas phases with respect to temperature, pressure and composition. For this purpose, the temperature versus composition, T-x , component pressure or total pressure versus temperature, p-T or P-T, and finally p-T-x or P-T-x diagrams have been experimentally determined and theoretically modeled. In order to control the stoichiometry of the crystals, the deviations from which affect strongly their semiconducting properties, the knowledge of the extent of the homogeneity domain and of the position of the stoichiometric line inside the three phase boundary is essential as well.After many experimental investigations and theoretical studies [1], the Cd-Te phase diagram has been revisited from total vapor pressure scanning experiments by J.H. Greenberg [2]. The determination of the *

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Section: Cdte Crystal Growth Versus Cd-te Chemical Bond Characteristicsmentioning

confidence: 99%

Fundamentals of the CdTe and CdZnTe bulk growth

Triboulet

2005

phys. stat. sol. (c)

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“…Once the high-temperature composition of the sample X S (T) is determined, one can proceed to stage 2 and calculate the room-temperature composition X S (RT) (1) Here N Cd and N Te are the numbers of Cd and Te gram-atoms in the sample, derived from the following system of equations:…”

Section: Vps Analysismentioning

confidence: 99%

“…1 While impurity control is a primary factor that has a direct impact on the quality of the subsequently grown crystals, adequate knowledge of the composition of the presynthesized sample can also be critical, depending on the parameters of the crystal growth process. For applications requiring bulk substrates, CdTe and CdZnTe crystals are almost exclusively grown from the melt.…”

Section: Introductionmentioning

confidence: 99%

Traveling heater method preparation and composition analysis of CdTe ingots

Audet¹,

Guskov

Greenberg

2005

Journal of Elec Materi

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Large polycrystalline CdTe charges for the subsequent growth of CdTe and CdZnTe crystals were prepared by the traveling heater method (THM). The composition of the produced material was evaluated by vapor pressure scanning (VPS) analysis. Results from these analyses were instrumental in improving the THM CdTe compounding process. The optimization of THM process parameters, such as the compounding rate and the loading configuration of the synthesis crucible, led to the preparation of polycrystalline CdTe ingots with small deviation from stoichiometry. For five out of six analyzed samples, tellurium content between 50.0012 and 50.0043 at. pct was achieved, which is well below the tellurium saturation limit of the single-phase solid in equilibrium with the molten zone at the chosen THM process temperature.

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“…5,7,8 In recent years, the traveling heater method (THM) as a solution technique has become an attractive method for producing both CdTe and CdZnTe detector-grade crystals. [9][10][11] The dynamic balance between dissolution and precipitation processes keeps the solute concentration in the liquid zone stable. This steady state could improve the uniformity of element distribution, thus increasing the production efficiency and decreasing the manufacturing cost.…”

Section: Introductionmentioning

confidence: 99%

Effects of Crystal Growth Methods on Deep-Level Defects and Electrical Properties of CdZnTe:In Crystals

Wang

Zhou

et al. 2014

Journal of Elec Materi

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Deep-level defects in CdZnTe:In (CZT) crystals grown by the modified vertical Bridgman (MVB) method and the traveling heater method (THM) were comparatively studied by thermally stimulated current (TSC) measurements. The trap density of Cd vacancy-related acceptor defects is found to be lower in THM-grown crystals compared with crystals grown by the MVB method, since the relatively low growth temperature of the THM will greatly reduce the loss of Cd and decrease the generation of Cd vacancies. Tellurium antisite-related deep donors are dominant in MVB-grown CZT, and Te interstitial-related deep acceptors are dominant in THM-grown CZT crystals grown by the Te-rich solution technique. The compensation of donor and acceptor defects leads to a low concentration of net free electrons in n-type MVB-grown CZT and a relatively high concentration of net free holes in p-type THM-grown CZT. The Fermi level in MVB-grown CZT is positioned below the conduction band by the antisite-related deep donor, while that in THM-grown CZT is positioned above the valence band by the interstitial-related deep acceptor.

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Fundamentals of the CdTe synthesis

Cited by 22 publications

References 13 publications

Fundamentals of the CdTe and CdZnTe bulk growth

Fundamentals of the CdTe and CdZnTe bulk growth

Traveling heater method preparation and composition analysis of CdTe ingots

Effects of Crystal Growth Methods on Deep-Level Defects and Electrical Properties of CdZnTe:In Crystals

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