Further Enhancement of Nitride-Based Near-Ultraviolet Vertical-Injection Light-Emitting Diodes by Adopting a Roughened Mesh-Surface

Lee, Chia-En; Lee, Yea-Chen; Kuo, Hao‐Chung; Lu, Tien−Chang; Wang, Shing-Chung

doi:10.1109/lpt.2008.921129

Cited by 21 publications

(10 citation statements)

References 10 publications

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“…Surface roughening through the chemical wet etching process [1,2], nanoimprint lithography [3], and nanostructures [4,5] has been applied to roughen the top surface of optoelectronic devices. Surface roughening has attracted considerable interest for applications such as solar cells (SCs), light-emitting diodes (LEDs), ultraviolet photodetectors (UV-PDs), and gas sensors [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Improving Crystalline Silicon Solar Cell Efficiency Using Graded-Refractive-Index SiON/ZnO Nanostructures

Wang

et al. 2015

International Journal of Photoenergy

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The fabrication of silicon oxynitride (SiON)/ZnO nanotube (NT) arrays and their application in improving the energy conversion efficiency ( ) of crystalline Si-based solar cells (SCs) are reported. The SiON/ZnO NT arrays have a graded-refractive-index that varies from 3.5 (Si) to 1.9 ∼ 2.0 (Si 3 N 4 and ZnO) to 1.72 ∼ 1.75 (SiON) to 1 (air). Experimental results show that the use of 0.4 m long ZnO NT arrays coated with a 150 nm thick SiON film increases Δ / by 39.2% under AM 1.5 G (100 mW/cm 2 ) illumination as compared to that of regular SCs with a Si 3 N 4 /micropyramid surface. This enhancement can be attributed to SiON/ZnO NT arrays effectively releasing surface reflection and minimizing Fresnel loss.

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Section: Introductionmentioning

confidence: 99%

Improving Crystalline Silicon Solar Cell Efficiency Using Graded-Refractive-Index SiON/ZnO Nanostructures

Wang

et al. 2015

International Journal of Photoenergy

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“…As a result, many techniques have been developed to increase the light extraction efficiency of LEDs. These techniques usually involve creating new optical channels for light extraction by fabricating surface textures, − photonic crystals, − or plasmonic nanostructures , on LEDs through usage of microfabrication techniques, such as optical lithography, e-beam lithography, or focused ion beam milling.…”

Section: Introductionmentioning

confidence: 99%

Maskless Surface Patterning of AlGaInP Light-Emitting Diodes by Photochemical Laser Interference Etching

et al. 2013

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Laser nanofabrication has attracted great interest for mass production of microstructures with desired or improved properties. We report here a facile, maskless method for fabricating two-dimensional (2D) quasiperiodic patterns on AlGaInP light-emitting diodes (LEDs) by photochemical laser interference etching. The interference pattern produced by two 532 nm laser beams is transferred to the top GaP window layer of the AlGaInP LEDs by photochemical etching of GaP in an etchant composed hydrofluoric acid (HF) and hydrogen peroxide (H2O2). The etched GaP surface contains 2D quasiperiodic pyramidal structures with a period of 150 ± 10 nm, which can dramatically increase the light extraction efficiency of the AlGaInP LEDs by 70%. This maskless patterning method is general and can be applied to fabricating patterns on optoelectronic devices based on other semiconductor materials.

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“…4,5) However, with the existence of a large refractive index difference between GaN (n ¼ 2:45) and air (n ¼ 1), a low critical angle of total internal reflection ($23:6 ) and a poor light extraction ratio (4%) 6) impede the light output power of VLEDs. Over the past decade, numerous surface roughening technologies, such as the use of a patterned sapphire substrate with a laser lift-off (LLO) process, 7) surface roughening using inductively coupled plasma (ICP) dry etching, 8) photoelectrochemical (PEC) etching, 9) the use of a micro-photolithographic system with dry and wet etching, 10) PEC for the roughening of oxide passivation mesa sidewalls, 11) and the use of a Ni nanomask with laser etching, 12) have been demonstrated to increase light extraction efficiency through random scattering from the roughened surface for high-power GaN-based LEDs.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO₂/SiO₂ Reflector and Roughened GaO_x Surface Film

Lee

Wang

Uang

et al. 2011

Jpn. J. Appl. Phys.

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GaN-based thin-film vertical-structured light-emitting diodes (VLEDs) with a GaO x film atop an n-GaN layer roughened via KrF laser irradiation and a TiO 2 /SiO 2 distributed Bragg reflector (DBR) are proposed and investigated. As compared with regular VLEDs with an Al reflector and without a roughened GaO x film, the proposed VLEDs with a chip size of 1 mm 2 show a typical increase in light output power by 68% at 350 mA and by 51% at 750 mA, which is attributed to the enhanced reflectivity and current blocking capability of the DBR layer, the surface roughening with circular GaN protrusions, and the formation of a surface GaO x film by KrF laser irradiation. #

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Further Enhancement of Nitride-Based Near-Ultraviolet Vertical-Injection Light-Emitting Diodes by Adopting a Roughened Mesh-Surface

Cited by 21 publications

References 10 publications

Improving Crystalline Silicon Solar Cell Efficiency Using Graded-Refractive-Index SiON/ZnO Nanostructures

Improving Crystalline Silicon Solar Cell Efficiency Using Graded-Refractive-Index SiON/ZnO Nanostructures

Maskless Surface Patterning of AlGaInP Light-Emitting Diodes by Photochemical Laser Interference Etching

Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO₂/SiO₂ Reflector and Roughened GaO_x Surface Film

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Further Enhancement of Nitride-Based Near-Ultraviolet Vertical-Injection Light-Emitting Diodes by Adopting a Roughened Mesh-Surface

Cited by 21 publications

References 10 publications

Improving Crystalline Silicon Solar Cell Efficiency Using Graded-Refractive-Index SiON/ZnO Nanostructures

Improving Crystalline Silicon Solar Cell Efficiency Using Graded-Refractive-Index SiON/ZnO Nanostructures

Maskless Surface Patterning of AlGaInP Light-Emitting Diodes by Photochemical Laser Interference Etching

Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO2/SiO2 Reflector and Roughened GaOx Surface Film

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Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO₂/SiO₂ Reflector and Roughened GaO_x Surface Film