A novel electron-rich cyclopentadithienothiophene (9H-thieno-[3,2-b]thieno[2″,3″:4′,5′]thieno [2′,3′:3,4]cyclopenta [1,2-d]thiophene, CDTT) is reported by an optimized one-pot procedure involving two sequential lithiation/acylation steps. Three novel copolymers containing the varied electron-deficient acceptors 2,1,3-benzothiadiazole (BT), 5,6-difluoro-2,1,3-benzothiadiazole (DFBT) and naphtho [1,2-c:5,6-c]bis[1,2,5]-thiadiazole (NT) were prepared by Stille polymerization. These three polymers show promising charge transport properties in transistor devices, with PCDTT-BT exhibiting unipolar hole mobility up to 0.67 cm 2 V −1 s −1 in top gate devices utilizing gold source drain electrodes. Changing to a bilayer electrode of Al/Au resulted in ambipolar transistor behavior, with PCDTT-DFBT exhibiting balanced hole and electron mobilities of 0.38 and 0.17 cm 2 V −1 s −1 respectively. These results clearly demonstrate that CDTT is a promising new building block for conjugated polymers.
■ INTRODUCTIONOrganic field-effect transistors (OFETs) have attracted great attention over the past decades due to their potential application as low-cost, lightweight, and flexible integrated circuits in large-area displays, sensors and detectors, and radio frequency identification (RFID) tags. 1,2 In terms of organic semiconductors for OFETs, conjugated polymers are interesting candidates due to their attractive combination of tunable structure, solution processability and thermal stability. 3 There has been impressive recent progress in the development of high charge carrier mobility polymers. 4−7 However, in some cases the devices show pronounced deviations from ideal transistor behavior or require special deposition techniques to align the polymer chains to achieve this promising performance. 8−10 Therefore, the development of new superior polymers which show robust performances under simple processing techniques is still an important challenge.For the development of organic circuits, the combination of p-and n-type transistors in a complementary metal−oxide− semiconductor (CMOS)-like approach is an attractive strategy. Several approaches to organic CMOS have been demonstrated, including the fabrication of discrete p-and n-type semiconductors and the use of blends. 2,11 An alternative is to utilize low band gap ambipolar materials which can be either p-or ntype depending on the gate bias. 11 This has the potential advantage that only a single deposition step is required for both p-and n-channel transistors. To obtain ambipolar properties, suitable HOMO/LUMO levels are essential to ensure efficient hole and electron injection. Previous studies have demonstrated that these energy levels can be readily tuned in donor−acceptor (D−A) copolymers by the selection of appropriate donor and acceptor units. Numerous efforts have been devoted to synthesize new donors and acceptors in an effort to tune the performance of ambipolar polymers. 12,13 Recently reports in D−A polymers with diketopyrrolopyrrole (DPP), 14 naphthalene diimide (NDI), 1...