Future Nonvolatile Memory Technologies: Challenges and Applications

A Survey of Emerging Memory in a Microcontroller Unit

“…Type-like Flash NVMs refer to the emerging NVMs that directly store data in nonvolatile devices without the need for backup and restore operations and perform NOR Flash memory operations by imposing voltages corresponding to block-erase, random program, and random read. Previous reports indicate that FRAM consumes less power than Flash and DRAM, offering fast and high-bandwidth read/write operations [11,15,20]. Nevertheless, from the low clock frequency of FRAM-based MCUs in Table 1, it can be realized that FRAM still suffers from high power dissipation and limited clock frequency constraints when compared with other emerging NVMs.…”

“…A state-of-the-art MCU utilized four key design techniques to implement a 10.8 MB embedded STT-MRAM macro, which achieved the fastest random read access frequency and write throughput among reported Flash-replacement MRAMs [59]. However, the limited endurance of RRAM and reliability issues of MTJ impede their broader utilization [15,19,54]. PCM featured an attractive cell size of 0.019 F 2 and attained the largest capacity of 21 MB among the embedded NVMs presented in Table 1.…”

“…FeFETs may have a lower critical voltage for polarization switching compared to standalone Fecaps, provided they can be operated in the negative polarization-voltage region [14]. An RRAM device is based on a metal-insulator-metal structure and utilizes voltage pulses to create multi-level conductance levels, including high-resistance state (HRS) and low-resistance state (LRS) [15]. The magnetic tunnel junction (MTJ) device has a free magnetic layer and a pinned magnetic layer, which are separated by a thin insulator layer.…”

Simulating Molecular Optical Properties of Polyimide for Nonvolatile Resistive Photomemory Devices

“…The development of the new generation of non-volatile memory is being actively pursued. The new generation of memories includes Ferroelectric Random Access Memory (FeRAM), Magnetoresistive Random Access Memory (MRAM), Phase Change Memory (PCRAM), and Resistive Random Access Memory (ReRAM) (Aswathy & Sivamangai, 2021;Meena, Sze, Chand, & Tseng, 2014). Among them, ReRAM stands out due to its strong flexibility, cost-effectiveness, using simple techniques, simple structure, fast switching speed, low operating voltage, excellent durability, reliable data retention, and low power consumption (Gao, Song, Chen, Zeng, & Pan, 2012;Ouyang, Chu, Tseng, Prakash, & Yang, 2005).…”