Future technology pathways of terrestrial III–V multijunction solar cells for concentrator photovoltaic systems

Law, D. C.; King, Richard R.; Yoon, Hyoseok; Archer, Melissa J.; Boca, Andreea; Fetzer, C. M.; Mesropian, S.; Isshiki, T.; Haddad, M.; Edmondson, K.

doi:10.1016/j.solmat.2008.07.014

Cited by 168 publications

(71 citation statements)

References 10 publications

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“…Solar energy can be considered as the best renewable energy because of the earth surface receives an amount of solar energy which is more than the world energy demand. As a result, solar cells and solar power generation becomes the popular topics which addressed by many researches and projects 1,2 , and the high-gain DC-DC converter as a key composition in photovoltaic system has been extensively used and researched 3,4 . The traditional switched inductor boost converter 5 has the characteristics of small inductor in size, mutual symmetry and the large gain enhancement space compared to the boost converter.…”

Section: Introductionmentioning

confidence: 99%

Research of Switched Inductor Boost Converter Based on Topology Combination

Jing¹,

Gao²,

Chen³

et al. 2018

dtetr

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According to the voltage gain of boost converter at the photovoltaic inverter system, a high gain switched inductor boost converter is proposed in this paper by analyzing and studying the voltage gain ability of traditional switched inductor boost converter which improves the switched inductor three-terminal network topology. The working principle and working characteristics of the designed boost topology are analyses in detail, and the corresponding mathematical model is established. Compared with the traditional converter, the proposed converter has some advantages which improving the boost ability and decreasing the voltage stress of the switch tube. Moreover, the simulations are shown to verify the correctness of the theoretical analysis.

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Section: Introductionmentioning

confidence: 99%

Research of Switched Inductor Boost Converter Based on Topology Combination

Jing¹,

Gao²,

Chen³

et al. 2018

dtetr

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“…Current match for such cells is a major constraint for further improvement of efficiencies. Future terrestrial cells will likely feature four or more junctions with performance potential capable of reaching over 50% efficiency at concentration (Law et al 2010). The 4-, 5-, or 6-junction concentrator cells trade lower current densities for higher voltage and divide the solar spectrum more efficiently.…”

Section: Introductionmentioning

confidence: 99%

“…The 4-, 5-, or 6-junction concentrator cells trade lower current densities for higher voltage and divide the solar spectrum more efficiently. For example, theoretical calculations indicate an ideal efficiency of over 59% for a 4-junction cell with bandgap combination of 1.9/1.42/1.02/0.75 eV (Law et al 2010). In these designs, III/V materials which have energy bandgap about 1.0-1.05 and 0.7-0.75 eV play very important roles (Sherif et al 2005).…”

Section: Introductionmentioning

confidence: 99%

Study of the Growth and Dislocation Blocking Mechanisms in InxGa1−xAs Buffer Layer for Growing High-Quality In0.5Ga0.5P, In0.3Ga0.7As, and In0.52Ga0.48As on Misoriented GaAs Substrate for Inverted Metamorphic Multijunction Solar Cell Application

Nguyễn

Hsu

et al. 2014

Energy Harvesting and Systems

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Effects of growth conditions and buffer structures on crystal quality of 1.9-eV In 0.5 G 0.5 P, 1-eV In 0.3 Ga 0.7 As, and 0.75-eV In 0.52 Ga 0.48 As materials on misoriented GaAs substrate for inverted metamorphic solar cell grown by metalorganic chemical vapor deposition have been studied. Large lattice mismatch issue between the two lower bandgap 1.0-eV In 0.3 Ga 0.7 As and 0.75-eV In 0.52 Ga 0.48 As epilayers and the substrate has been resolved by using optimized step-graded buffer layers. Threading dislocation blocking mechanisms have been studied and discussed. It was indicated that threading dislocations have been significantly blocked in the designed InGaAs buffer layers through annihilation reactions between threading dislocations or through the formation of misfit dislocations. As a result, smooth surface In 0.3 Ga 0.7 As and In 0.52 Ga 0.48 As epifilms with threading dislocation density of about 1 Â 10 6 cm −2 were obtained.For the growth of InGaP, the surface morphology, crystal quality, ordering parameter, and InGaP composition were significantly affected by growth temperature, V/III ratio, and III/III ratio. The almost lattice match to the substrate, high crystal quality, and smooth surface of In 0.495 Ga 0.505 P were obtained at growth temperature of 675°C and V/III ratio above 150. The ordering parameter was strongly dependent on growth temperature. Photoluminescence measurement indicated that the bandgap of the InGaP epilayer is 1.89 eV, indicating that the solid composition in the InGaP film is more disordered.

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“…These fundamental spectral losses in a singlejunction silicon solar cell can be as large as 50% (Wolf 1971), while the detailed balance limit of conversion efficiency for such a cell was determined to be 31% (Shockley and Queisser 1961). Several routes have been proposed to address spectral losses, and all of these methods or concepts obviously concentrate on a better exploitation of the solar spectrum, e.g., multiple stacked cells (Law et al 2010), intermediate band gaps (Luque and Marti 1997), multiple exciton generation (Klimov 2006, Klimov et al 2007), quantum dot concentrators (Chatten et al 2003a) and down-and up-converters (Trupke et al 2002a, b), and down-shifters (Richards 2006a, Van Sark 2005. In general they are referred to as Third or Next Generation photovoltaics (PV) (Green 2003, Luque et al 2005, Martí and Luque 2004.…”

Section: Introductionmentioning

confidence: 99%