2017
DOI: 10.1016/j.apcatb.2017.05.038
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g-C3N4/Nb2O5 heterostructures tailored by sonochemical synthesis: Enhanced photocatalytic performance in oxidation of emerging pollutants driven by visible radiation

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Cited by 124 publications
(52 citation statements)
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“…However, the use of 5.0 g of melamine resulted in the formation of another phase that was identified as graphitic carbon nitride (g‐C 3 N 4 ) (JCPDS card no. 87‐1526), which was the predominant phase in this sample.…”
Section: Resultsmentioning
confidence: 82%
See 1 more Smart Citation
“…However, the use of 5.0 g of melamine resulted in the formation of another phase that was identified as graphitic carbon nitride (g‐C 3 N 4 ) (JCPDS card no. 87‐1526), which was the predominant phase in this sample.…”
Section: Resultsmentioning
confidence: 82%
“…The inappropriate disposal of hazardous industrial wastes such as pesticides, dyes, and pharmaceuticals in water resources causes serious effects in entire ecosystems, with significant impacts on the environment and to the health of living beings . There are increasing efforts to develop suitable processes for the elimination or reduction of such contaminants . Oxide semiconductors including zinc oxide (ZnO) have been successfully used in photocatalytic processes for the degradation of environmental pollutants .…”
Section: Introductionmentioning
confidence: 99%
“…Organic pollutants like phenol and other benzene derived synthetic dyes have proved to be highly carcinogenic and need to be degraded completely before these are released in the environment. Owing to their high stability, a wide range of methods like adsorption, photocatalytic degradation, precipitation techniques have been developed for removal of these dyes . Advanced Oxidation Processes (AOPs) are efficient methods which can be used for dye degradation involving UV/O 3 , UV/Fenton's reagent or UV/H 2 O 2 by producing hydroxyl radical (OH . )…”
Section: Introductionmentioning
confidence: 99%
“…Among the studied various narrow band gap semiconductor materials, the g-C 3 N 4 with an indirect band gap of 2.7 eV has attracted extensive attention due to its thermal stability, physicochemical stability, excellent photoelectric transmission property, non-toxic and harmless characteristics [ 20 , 21 , 22 ]. In addition, semiconductor g-C 3 N 4 was easily available and can be obtained by direct thermal decomposition of precursor materials, for instance, urea, melamine, cyanamide and dicyandiamide [ 23 , 24 , 25 , 26 ]. Nowadays, several techniques have been reported to combine TiO 2 with g-C 3 N 4 to form composite.…”
Section: Introductionmentioning
confidence: 99%