“…Among the studied various narrow band gap semiconductor materials, the g-C 3 N 4 with an indirect band gap of 2.7 eV has attracted extensive attention due to its thermal stability, physicochemical stability, excellent photoelectric transmission property, non-toxic and harmless characteristics [ 20 , 21 , 22 ]. In addition, semiconductor g-C 3 N 4 was easily available and can be obtained by direct thermal decomposition of precursor materials, for instance, urea, melamine, cyanamide and dicyandiamide [ 23 , 24 , 25 , 26 ]. Nowadays, several techniques have been reported to combine TiO 2 with g-C 3 N 4 to form composite.…”