GaAlInAs ternary and quaternary alloys lattice matched to InP for electronic, optoelectronic and optical device applications, by LP-MOVPE

Observation of optical bleaching at 1.06μm in AlInAs/AlGaInAs multiple quantum wells

“…A wide range of growth conditions have been used for Al 0.48 In 0.52 As growth [12][13][14][15][16]. Our initial attempts to grow this alloy at 620 1C produced a poor surface dominated by a rough orange-peel morphology with a high density of droplet defects, over 6 Â 10 6 cm À 2 .…”

InP substrate evaluation by MOVPE growth of lattice matched epitaxial layers

“…This is especially true for epitaxy on InP (1 0 0) substrates, where a large fraction of the epitaxial structure can be AlInAs or GaInAs alloys. Prior investigation of the growth of these alloys by metal-organic vapor phase epitaxy (MOVPE) allows electronic and optoelectronic epitaxial structures to be fabricated [1][2][3]. Prior studies on InP epitaxy document the importance of small intentional miscuts to achieve low defect densities [4][5][6][7].…”