Ga-catalyzed growth of ZnSe nanowires and the cathodoluminescence and electric transport properties of individual nanowire

Lei, Ming; Fu, Xiuli; Yang, Han; Wang, Y.G.; Li, P.G.; Hu, Q.R.; Tang, W.H.

doi:10.1016/j.matchemphys.2012.01.101

Cited by 9 publications

(3 citation statements)

References 37 publications

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“…The specific contact resistivity found in this section is in good agreement with other reports on ZnSe nanowires [30] and thin films [51]. The measured I ds −V ds curves confirm n-type conduction, and have conductivity values lower than those typically seen in bulk crystals [14], but comparable to those measured in Ga-doped nanowires [52] and nitrogen-doped nanowires [53]. Nonlinearities in the I ds −V ds curve can be attributed to device contacts that can screen the gate potential [54], and to surface effects, such as adsorbed gas molecules and screening by free carriers.…”

Section: Electrical Characterizationsupporting

confidence: 91%

Enhancement of transport properties in single ZnSe nanowire field-effect transistors

et al. 2018

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Wide-gap semiconductors are excellent candidates for next-generation optoelectronic devices, including tunable emitters and detectors. ZnSe nanowire-based devices show great promise in blue emission applications, since they can be easily and reproducibly fabricated. However, their utility is limited by deep level defect states that inhibit optoelectronic device performance. The primary objective of this work is to show how the performance of ZnSe nanowire devices improves when nanowires are subjected to a post-growth anneal treatment in a zinc-rich atmosphere. We use low temperature photoluminescence spectroscopy to determine the primary recombination mechanisms and associated defect states. We then characterize the electronic properties of ZnSe nanowire field effect transistors fabricated from both as-grown and Znannealed nanowires, and measure an order-of-magnitude improvement to the electrical conductivity and mobility after the annealing treatment. We show that annealing reduces the concentration of zinc vacancies, which are responsible for strong compensation and high amounts of scattering in the as-grown nanowires.

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Section: Electrical Characterizationsupporting

confidence: 91%

Enhancement of transport properties in single ZnSe nanowire field-effect transistors

et al. 2018

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“…By doping with metal elements (e.g. Cl and Ga), namely incorporating metal atoms into their crystal lattice, ZnSe nanowires with tunable electron concentrations have been successfully synthesized [20][21][22]. Unfortunately, due to the strong self-compensation effect and Fermi level pinning effect [23], p-type doping of ZnSe nanostructures, in particular low resistive ZnSe nanostructures with controllable electrical properties, is very difficult and remains unresolved [24,25].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of p-type ZnSe:Sb nanowires for high-performance ultraviolet light photodetector application

et al. 2013

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p-type ZnSe nanowires (NWs) with tunable electrical conductivity were fabricated on a large scale by evaporating a mixed powder composed of ZnSe and Sb in different ratios. According to the structural characterization, the Sb-doped ZnSe NWs are of single crystalline form and grow along the [001] direction. The presence of Sb in the ZnSe NWs was confirmed by XPS spectra. Electrical measurement of a single ZnSe:Sb NW based back-gate metal-oxide field-effect-transistor reveals that all the doped NWs exhibit typical p-type conduction characteristics, and the conductivity can be tuned over eight orders of magnitude, from 6.36 × 10(-7) S cm(-1) for the undoped sample to ∼37.33 S cm(-1) for the heavily doped sample. A crossed p-n nano-heterojunction photodetector made from the as-doped nanostructures displays pronounced rectification behavior, with a rectification ratio as high as 10(3) at ±5 V. Remarkably, it exhibits high sensitivity to ultraviolet light illumination with good reproducibility and quick photoresponse. Finally, the work mechanism of such a p-n junction based photodetector was elucidated. The generality of the above result suggests that the as-doped p-type ZnSe NWs will find wide application in future optoelectronics devices.

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“…Meanwhile, the chalcogenide materials is became the best doping base owing to it in the mid-infrared, low optical loss and the better crystal structure especially in ZnS and ZnSe. Thus, Co or Ga doped chalcogenide have been achieved a lot of research such as Co doped in ZnS [17], Ga doped in ZnSe [18] and Co-Ga co-doped in ZnO [19]. But, there is no report on the Co-Ga co-doped in chalcogenid materials.…”

Section: Introductionmentioning

confidence: 99%

Preparation, Structure, Optical and Morphological Properties of Co, Ga<sub>2</sub>O<sub>3</sub> Co-Doped ZnS/Se

Pan

Wang

Gao

et al. 2019

MSF

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The material of doping transition metal (TM) in chalcogenide compound such as ZnS and ZnSe can be used in sensors, nonlinear optics, optical thin-films and mid-infrared area because of their faster optical response time, wider transparency range of mid-infrared and higher mid-infrared transmittance, low optical loss and phonon energy. In this paper, the ceramic targets of (ZnS/Se)0.4(Co)x(Ga2O3)0.6-x(x=0.1, 0.3 and 0.5) were prepared by high temperature solid state reaction. The mass loss rate, shrinkage rate and molar ration were calculated. XRD, absorption spectrum and AFM&OM were investigated. All of the results are shown that the optimum doping concentration is (ZnS/Se)0.4(Co)0.5(Ga2O3)0.1(namely x=0.5), and the optimum intering temperature are in the range 1000~1200°C. Besides, the zinc-blende structure on ceramics targets was confirmed by XRD. A broad application range from VIS to Mid-infrared was suggested by absorption spectra. The optimal base material ZnSe was proved by AFM and OM. All these results indicate that bulks of (ZnS/Se)0.4(Co)x(Ga2O3)0.6-xare most promising materials in future

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Ga-catalyzed growth of ZnSe nanowires and the cathodoluminescence and electric transport properties of individual nanowire

Cited by 9 publications

References 37 publications

Enhancement of transport properties in single ZnSe nanowire field-effect transistors

Enhancement of transport properties in single ZnSe nanowire field-effect transistors

Fabrication of p-type ZnSe:Sb nanowires for high-performance ultraviolet light photodetector application

Preparation, Structure, Optical and Morphological Properties of Co, Ga<sub>2</sub>O<sub>3</sub> Co-Doped ZnS/Se

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