Ga-droplet-induced formation of GaAs nano-islands by chemical beam epitaxy

Ro, Jeong-Rae; Kim, Sung-Bock; Park, Kyoungwan; Lee, El-Hang; Lee, Jun Young

doi:10.1016/s0022-0248(99)00034-2

Cited by 14 publications

(5 citation statements)

References 7 publications

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“…This method is potentially not limited to mismatched material systems. QDs structures with high crystalline properties and high density were demonstrated using the droplets epitaxy method for the growth of GaAs, GaN, InGaAs and InAs [12][13][14][15][16][17]. So far only one group has utilized the DHE for the growth of InSb nanometric structures; using MBE, InSb nanodots were formed on closely lattice matched CdTe layer [11].…”

Section: Introductionmentioning

confidence: 99%

High-density nanometer-scale InSb dots formation using droplets heteroepitaxial growth by MOVPE

Shusterman

Paltiel²,

Sher³

et al. 2006

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

High-density nanometer-scale InSb dots formation using droplets heteroepitaxial growth by MOVPE

Shusterman

Paltiel²,

Sher³

et al. 2006

Journal of Crystal Growth

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“…Recently, an alternative approach to the QDs growth, known as the droplet heteroepitaxy (DHE) method, − has emerged. The DHE method consists of two basic stages: formation of group III element nanodroplets on the substrate and subsequent exposure of these droplets to the gas-phase flow of one or more group V elements.…”

mentioning

confidence: 99%

Nanoscale Mapping of Strain and Composition in Quantum Dots Using Kelvin Probe Force Microscopy

et al. 2007

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A key factor in improving quantum dots electrical properties and dots-based devices is the ability to control the crucial parameters of composition, doping, size, and strain distribution of the dots. We show that nanometer-scale work function measurements using ultrahigh vacuum Kelvin probe force microscopy is capable of measuring the strain and composition variations within and around individual QDs. This is accomplished by analyzing the detailed surface potential profiles in and around InSb/GaAs dots.

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“…A variety of highly crystalline and high density nanostructures, grown on various substrates have already been demonstrated using the DHE method. These include combinations of GaAs, GaN, InGaAs, InAs, InSb, InAsSb and GaSb [ 17 – 21 ] Interestingly enough, in some of those systems, the dots were realized with practically no substrate-dot lattice mismatch [ 17 , 21 ]. Complex shape control has also been achieved by the droplet method [ 22 ].…”

Section: Introductionmentioning

confidence: 99%

Surface X-Ray Diffraction Results on the III-V Droplet Heteroepitaxy Growth Process for Quantum Dots: Recent Understanding and Open Questions

Cohen

Elfassy

Koplovitz

et al. 2011

Sensors

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In recent years, epitaxial growth of self-assembled quantum dots has offered a way to incorporate new properties into existing solid state devices. Although the droplet heteroepitaxy method is relatively complex, it is quite relaxed with respect to the material combinations that can be used. This offers great flexibility in the systems that can be achieved. In this paper we review the structure and composition of a number of quantum dot systems grown by the droplet heteroepitaxy method, emphasizing the insights that these experiments provide with respect to the growth process. Detailed structural and composition information has been obtained using surface X-ray diffraction analyzed by the COBRA phase retrieval method. A number of interesting phenomena have been observed: penetration of the dots into the substrate (“nano-drilling”) is often encountered; interdiffusion and intermixing already start when the group III droplets are deposited, and structure and composition may be very different from the one initially intended.

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Ga-droplet-induced formation of GaAs nano-islands by chemical beam epitaxy

Cited by 14 publications

References 7 publications

High-density nanometer-scale InSb dots formation using droplets heteroepitaxial growth by MOVPE

High-density nanometer-scale InSb dots formation using droplets heteroepitaxial growth by MOVPE

Nanoscale Mapping of Strain and Composition in Quantum Dots Using Kelvin Probe Force Microscopy

Surface X-Ray Diffraction Results on the III-V Droplet Heteroepitaxy Growth Process for Quantum Dots: Recent Understanding and Open Questions

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