Ga<i>x</i>In1−<i>x</i>As multiple-quantum-wire lasers grown by the strain-induced lateral-layer ordering process

Chou, S. G.; Cheng, K. Y.; Chou, L. J.; Hsieh, K. C.

doi:10.1063/1.114148

Cited by 55 publications

(44 citation statements)

References 6 publications

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“…Auger recombination will also be greatly reduced [4][5][6]. Also, the temperature sensitivity is reduced by an order of magnitude compared with strain-free structures.…”

mentioning

confidence: 90%

“…The k · p model is the most popular one for treating electronic structures of semiconductor quantum wells or superlattices. However, when applied to complex structures such as self-assembled quantum wires [4][5][6][7][8][9] or quantum dots [13,18,19], the method becomes very cumbersome if one wish to implement the correct boundary conditions that take into account the differences in k · p band parameters for different materials involved. EBOM is free of this problem, since different material parameters are used at different atomic sites in a natural way.…”

Section: Theoretical Approachmentioning

confidence: 99%

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Systematic study of Ga1−xInxAs self-assembled quantum wires with varying interfacial strain relaxation

Sun

Chang

2001

Journal of Applied Physics

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A systematic theoretical study of the electronic and optical properties of Ga 1−x In x As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is based on the effective bond-orbital model (EBOM) combined with a valence-force field (VFF) model.Valence-band anisotropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. Several structure models with varying degrees of alloy mixing for lateral modulation are considered. A valence force field model is used to find the equilibrium atomic positions in the QWR structure by minimizing the lattice energy. The strain tensor at each atomic (In or Ga) site is then obtained and included in the calculation of electronic states and optical properties.It is found that different local arrangement of atoms leads to very different strain distribution, which in turn alters the optical properties. In particular, we found that in model structures with thick capping layer the electron and hole are confined in the Ga-rich region and the optical anisotropy can be reversed due to the variation of lateral alloying mixing, while for model structures with thin capping layer the electron and hole are confined in the In-rich region, and the optical anisotropy is much less sensitive to the lateral alloy mixing.

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“…Auger recombination will also be greatly reduced [4][5][6]. Also, the temperature sensitivity is reduced by an order of magnitude compared with strain-free structures.…”

mentioning

confidence: 90%

Section: Theoretical Approachmentioning

confidence: 99%

Systematic study of Ga1−xInxAs self-assembled quantum wires with varying interfacial strain relaxation

Sun

Chang

2001

Journal of Applied Physics

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“…Furthermore, Ga x In 1−x As/InP multiple-layered Q-wire lasers with an emitting wavelength of 1.69 µm at T = 77 K were fabricated by the SI-LO method [56], and GaInAs/InP single Q-wire lasers with an emitting wavelength of more than 1.3 µm at T = 15 K were fabricated by selective growth on a V-groove substrate [77].…”

Section: B Long-wavelength Q-wire and Q-dot Lasersmentioning

confidence: 99%

“…2. : 1) fractional (submonoatomic) layer growth on the step edge of a vicinal substrate [13], [47], [48]; 2) a combination of lithography, etching, and embedding growth [49]- [52]; 3) selective growth on a patterned substrate [53]- [55]; 4) SI-LO of binary superlattices [56]; 5) SI-SO growth [46]; and 6) cleaved edge overgrowth [40]. We have investigated a fabrication method that combines EB lithography, etching, and two-step organometallic vapor-phaseepitaxial (OMVPE) growth, because this method has better position controllability and wider applications than other methods.…”

Section: A Various Fabrication Techniques Of Q-wire Structuresmentioning

confidence: 99%

GaInAsP/InP Quantum Wire Lasers

Arai

Minamikawa

2009

IEEE J. Select. Topics Quantum Electron.

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Abstract-Present status of GaInAsP/InP long-wavelength quantum wire lasers, fabricated by a method using electron beam exposure, dry etching, and two-step organometallic vapor-phase epitaxy, is described from aspects of low-damage interface formation and size uniformity of quantum wire structures. Even though superior lasing properties attributed to sharper gain spectrum over that of quantum well structure have not been realized yet, polarization anisotropic feature of the quantum wire structure and formation of good interfaces by this fabrication method were confirmed. Single-wavelength lasers consisting of quantum wire structure as the active and/or the passive regions have been realized as possible candidates for future integrated photonics.Index Terms-Distributed Bragg reflector (DBR) laser, distributed feedback (DFB) laser, distributed reflector (DR) laser, GaInAsP/InP, low-dimensional quantum well (QW) structure, polarization anisotropy, quantum wire laser.

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“…reduction of bandgap and polarisation anisotropies) and can be characterised by its average composition, average amplitude, wavelength and direction. In general, LCM is avoided in device structures; however, with the recent emergence of nanotechnology, efforts have been made to exploit it for quantum confinement devices such as quantum wire (QWR) based detectors and lasers [6,7].…”

Section: Introductionmentioning

confidence: 99%

X-ray diffraction analysis of lateral composition modulation in InAs/GaSb superlattices intended for infrared detector applications

Stokes

Forrest

et al. 2003

IEE Proc., Optoelectron.

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Lateral compositional modulation in a ðInAsÞ 13 =ðGaSbÞ 13 superlattice grown by molecular beam epitaxy for infrared detector applications has been investigated using highresolution X-ray diffraction. X-ray diffraction reciprocal space maps exhibit distinct lateral satellite peaks about the vertical superlattice peaks; however, the pattern is tilted with respect to the (001) direction. This tilt is directly related to the stacking of the layers as revealed by cross-sectional scanning tunnelling microscopy (XSTM) images. XSTM shows the morphology of the structure to consist of InAs-and GaSb-rich regions with a modulation wavelength of , 1200 Å and a lateral composition wavelength of 554 AE 3 A: The modulation only occurs along one in-plane direction, resulting in InAs 'nanowires' along the [110] direction, which are several microns long. The possible causes of the lateral composition modulation and its impact on device performance are discussed.

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GaxIn1−xAs multiple-quantum-wire lasers grown by the strain-induced lateral-layer ordering process

Cited by 55 publications

References 6 publications

Systematic study of Ga1−xInxAs self-assembled quantum wires with varying interfacial strain relaxation

Systematic study of Ga1−xInxAs self-assembled quantum wires with varying interfacial strain relaxation

GaInAsP/InP Quantum Wire Lasers

X-ray diffraction analysis of lateral composition modulation in InAs/GaSb superlattices intended for infrared detector applications

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