Ga-In Nanoparticle Induced UV Plasmonic Impact on Heterojunction Based Deep UV Photodetector

Kumar, Ashish; Ahuja, Jagriti; Mondal, Arnab; Bag, Ankush

doi:10.1109/tnano.2022.3168495

Cited by 13 publications

(11 citation statements)

References 38 publications

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“…Samples were annealed at 300°C, 500°C, and 700°C for 2 hours each as shown in Figure 1. Annealing is a continuous and sequential process that helps to adjust the thickness of the flakes also [15,16]. The SAT and annealing details of the three categories of samples are summarized in Table 1.…”

Section: Annealing Sequence and Nfs Formationmentioning

confidence: 99%

“…In these samples, nanowires and beads are observed as a more dominant nanostructure. Since selfassembly requires no external interference and hence the prenucleation was not done by self-assembly; these grown structures have more annealing effect than self-assembly [16]. The morphological study of the deposited samples was followed by XRD analysis for each category of samples to investigate their crystallinity.…”

Section: Materials Characterizationmentioning

confidence: 99%

“…Various methods to deposit the β-Ga2O3 thin film or nanostructures (NSs) have already been reported according to their practical applications in different areas [7][8][9][10]. Micro-flakes [11], nanosheets [12], nano-webs [13], and NSs [14][15][16][17][18] have been fabricated and implemented for different devices. Apart from the various conventional growth techniques, self-assembly has also been proven to be one of the inexpensive growth techniques for the synthesis of β-Ga2O3 NSs [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

“…Micro-flakes [11], nanosheets [12], nano-webs [13], and NSs [14][15][16][17][18] have been fabricated and implemented for different devices. Apart from the various conventional growth techniques, self-assembly has also been proven to be one of the inexpensive growth techniques for the synthesis of β-Ga2O3 NSs [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

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Tailoring of structural and optical properties of electrosprayed β-Ga2O3 nanostructures via self-assembly

2023

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The present article demonstrates the fabrication of various β-Gallium Oxide (Ga2O3) nanostructures (NSs) by lowcost and scalable electrospraying (ES) methods via self-assembly (SA). The effect of the annealing sequences on the selfassembled β-Ga2O3 NSs has been detailed. The comparative studies of NSs and nanoflakes (NFs) growth with annealing effect at different stages of self-assembly time (SAT) have been explored further. The fabricated NSs and NFs have been investigated using x-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The comparative study of categorized growth samples shows better crystalline quality when moving from the category 1 (C1) sample to the category 3 (C3) sample. The annealing sequences with SAT play a significant role in crystal formation and its quality, optical properties, and morphology of the Ga2O3 NSs. The optical properties of NSs have been derived from the normal incidence of absorbance measurements. The maximum observed energy band gap is ~5.40 eV. Traps and impurities play a critical role in the formation and deformation of energy bands in crystals. The photoluminescence (PL) spectra further reveal the variation in the intensity of luminescence of different emission bands due to the variation in the number of defect states and impurities in the NSs.

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Section: Annealing Sequence and Nfs Formationmentioning

confidence: 99%

Section: Materials Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Tailoring of structural and optical properties of electrosprayed β-Ga2O3 nanostructures via self-assembly

2023

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“…Now the resulting UV plot agrees with the sample substrate S3 morphology. For the direct bandgap, the absorption follows a power law of the form [33],…”

Section: Materials Analysismentioning

confidence: 99%

Engineering Ga2O3 phases with MIST-CVD for Gas Sensing Applications

Kumar

Praneeth

Al-Shidaifat

et al. 2023

Preprint

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With the utilization of UV-C radiation sterilizers on the ascension in the wake of the recent pandemic, it has become imperative to have health safety systems in place to curb the ill effects on humans. This requires detection systems with felicitous spectral replication to the “invisible to the unclad eye” radiation leaks with utmost sensitivity and swiftness. Gallium Oxide (Ga2O3), a semiconductor, has gained a lot of attention among researchers due to its ultra-wideband gap (4.9eV) and high critical field with a value of 8 MV/cm. It is Transparent Conductive Oxide (TCO). Ga2O3 has five different atomic structures of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), and orthorhombic (ε) structures. Of these, the β-polymorph is selected because of band gap energy (Eg ≈ 4.7–4.9 eV), it is highly stable in thermal and chemical properties. In this context, the present article demonstrates the best and most suitable technique for the deposition of β-Ga2O3 (Gallium Oxide). This work demonstrates the layer deposition of β-Ga2O3 (Gallium Oxide) thin-film with MIST-CVD (Chemical Vapor Deposition) and optimization of the deposited layer to the extent of using different techniques and analyzing different plots. This deposited layer on a substrate is used for applications of gas sensors or Ultraviolet-Photodetectors (UV-PDs. This article has also demonstrated the successful application of optimized thin film for gas sensing.

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Promoting 2D Material Photodetectors by Optical Antennas beyond Noble Metals

et al. 2023

Advanced Sensor Research

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The distinctive layered crystal structures and diverse properties of 2D layered materials (2DLMs) have established them as prospective building blocks for implementing next‐generation optoelectronics. One critical predicament in terms of light sensing is the weak absorption caused by the atomic‐scale thickness, as well as the limited effective wavelength range/low spectral selectivity constrained by the intrinsic band structures. Despite the fact that numerous noble metal antennas are harnessed for enhancing the light–matter coupling, they suffer from exorbitant cost and narrow resonant optical windows. To this end, a number of non‐noble plasmonic optical antennas have been developed to improve the light‐sensing properties of 2DLM photodetectors, and tremendous advances have been accomplished. Herein, a comprehensive overview of this subject is provided based on four aspects; namely, non‐noble metal antenna promoted 2DLM photodetectors, heteroatom doped semiconductor antenna promoted 2DLM photodetectors, non‐stoichiometric semiconductor antenna promoted 2DLM photodetectors, and MXene antenna promoted 2DLM photodetectors. The focus is on the device structures, preparation, and underlying mechanisms. In the end, the challenges are highlighted, and potential strategies addressing them are proposed, which aim to navigate the upcoming exploration in the related domains and fully exert the pivotal role of non‐noble plasmonic optical antennas toward advancing 2DLM photodetectors.

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Ga-In Nanoparticle Induced UV Plasmonic Impact on Heterojunction Based Deep UV Photodetector

Cited by 13 publications

References 38 publications

Tailoring of structural and optical properties of electrosprayed β-Ga2O3 nanostructures via self-assembly

Tailoring of structural and optical properties of electrosprayed β-Ga2O3 nanostructures via self-assembly

Engineering Ga2O3 phases with MIST-CVD for Gas Sensing Applications

Promoting 2D Material Photodetectors by Optical Antennas beyond Noble Metals

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