Ga-induced superstructures on the Si(111) 7×7 surface

First Demonstration of Direct Growth of Planar High-In-Composition InGaN Layers on Si

“…All InGaN layers were grown by PA-MBE (MECA 2000) on Si(111) substrates without any buffer layers. After insertion into the MBE growth chamber, the native oxide was removed at 800 C followed by 20 min annealing at 850 C. 13,14) Then, the Si surface was nitrided under active nitrogen flux for 5 min at the substrate temperature of 850 C. InGaN growth was performed at 400, 450, and 500 C. The In and Ga fluxes were kept constant at 4.2 and 4.6 nm/min, respectively. The InGaN growth rate was 0.45 m h À1 and the layer thickness was 450 nm.…”

( 7 × 7 ) reconstruction as barrier for Schottky-barrier formation at the Ga/Si(111) interface

“…3 Adsorption of metals on this complicated reconstruction has offered great challenges and also opportunities to utilize its diversity for tailoring properties of devices. [8][9][10] Here, we revisit the evolution of the Ga/ Si͑111͒ 7 ϫ 7 at room temperature. 5 Most studies to date have concentrated on the adsorption of Ga on Si substrates held at high temperatures, 6 while those on the initial stages of the Ga/Si interface formation at RT have been almost negligible, due to the perception of lack of superstructural phases.…”