Ga-Sn-O Thin-Film Memristor and Analog Plasticity Characteristic

Abstract

Ga-Sn-O (GTO) thin-film memristor has been developed, and an analog plasticity characteristic has been observed. First, GTO thin-film memristors are fabricated by depositing three GTO layers in a stacked structure using sputtering. Next, the current-voltage characteristics are measured by varying the maximum applied voltage after a certain negative voltage, the hysteresis is observed, and the switching characteristics are evaluated, which is regarded as that an analog plasticity characteristic is observed. The parametric study is done for the stacked structure and deposition process, and the proposed operating mechanism is that oxygen vacancies reciprocate by applying negative and positive voltages. Finally, the pulse application characteristic shows the long-term potentiation and depression, which presents a practical possibility to utilize the GTO thin-film memristor for neuromorphic systems.

Thin-film memristor using an amorphous metal–oxide semiconductor with a gradient composition of conducting components

“…The first advantage is that the desired distribution of the electric conductivity has already been obtained in the asfabricated one, so the forming operation is no longer needed. The second advantage is that an analog memristive characteristic 13,14) can be obtained easily because the component composition can be optimized freely in the AOS. In this paper, the device structure, fabrication processes, memristor characteristics, and working mechanism are explained.…”

In–Ga–Zn–O memristor with double layers of different oxygen vacancy densities and long-term memory towards neuromorphic applications

“…In this research, an IGZO memristor with double layers of different oxygen vacancy (V O ) densities has been developed, and long-term memory (LTM) towards neuromorphic applications has been confirmed. The design policy will be available, although IGZO memristors [15][16][17] and other AOS memristors 18,19) have already been reported.…”