Ga2O3-photoassisted decomposition of insecticides

500 V breakdown voltage in β‐Ga2O3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm2 power figure of merit

“…Achieving high V BR is a major challenge in LDMOSFET, and many research works and different studies have been carried out in this field. Ga 2 O 3 is a compound semiconductor with a super-high bandgap (E g ) used for the functioning of high-voltage devices because of its excellent electrical characteristics such as E g ~4.8 eV and significant breakdown field ~8 MV/cm [24][25][26][27][28][29][30][31][32]. However, a Ga 2 O 3 wafer device is achievable at room temperature, with large electron mobility of 150 cm 2 /V S. Gallium oxide can be used in low-voltage operations and RF applications.…”

Gallium Oxides Photocatalysts Doped With Fe Ions for Discoloration of Rhodamine Under UV and Visible Light

“…This can be attributed to the higher oxidation and reduction power of the hole-electron photogenerated on the surface of Ga 2 O 3 . Therefore, Ga 2 O 3 is considered a promising material for applications in pollutant degradation (Hidaka and Tsukamoto, 2019), CO 2 reduction (Li et al, 2018), water splitting (Zong and Li, 2018), among other emerging applications. β-Ga 2 O 3 had the highest photoactivity compared to the α and γ crystalline phases.…”

“…β-Ga 2 O 3 had the highest photoactivity compared to the α and γ crystalline phases. It is a better photocatalyst for the degradation of organic compounds (Reddy et al, 2015;Hidaka and Tsukamoto, 2019). Gallium oxides have demonstrated good photocatalytic activity for the degradation of dyes (Das et al, 2019;Zhang et al, 2020;Du et al, 2021), emerging contaminants, among other pollutants (Zhao et al, 2011;Hidaka and Tsukamoto, 2019).…”

“…It is a better photocatalyst for the degradation of organic compounds (Reddy et al, 2015;Hidaka and Tsukamoto, 2019). Gallium oxides have demonstrated good photocatalytic activity for the degradation of dyes (Das et al, 2019;Zhang et al, 2020;Du et al, 2021), emerging contaminants, among other pollutants (Zhao et al, 2011;Hidaka and Tsukamoto, 2019). Das et al (2019) researched the photocatalytic activity of porous brick-like low dimensional Ga 2 O 3 nanostructures for discoloration of rhodamine and methyl orange, reporting a complete discoloration.…”

500 V Breakdown Voltage in β-Ga 2 O 3 LDMOSFET With 108 MW/cm 2 Power Figure of Merit

“…Achieving high V BR is a major challenge in LDMOSFET research, and multiple studies have been investigated differently. Gallium oxide (Ga 2 O 3 ) is a compound semiconductor by the super-high bandgap (E g ) for the functioning of high-voltage devices because of its excellent electrical characteristics such as E g ~ 4.8 eV and signi cant breakdown eld ~ 9 MV/cm [20][21][22][23][24][25][26][27][28]. However, a Ga 2 O 3 wafer device is achievable at room temperature, with large electron mobility of 150 cm 2 /V S. Gallium oxide, which can be used in low-voltage operations and RF applications.…”