Ga2O3 thin films for high-temperature gas sensors

Ogita, Masami; Saika, N; Nakanishi, Y.; Hatanaka, Y.

doi:10.1016/s0169-4332(98)00714-4

Cited by 213 publications

(146 citation statements)

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“…The monoclinic gallium oxide (b-Ga 2 O 3 ) is a semiconductor with a wide bandgap of about 4.9 eV with potential applications in optoelectronics such as waveguides and optical emitters for UV radiation, 1,2 gas sensing, 3 and photocatalysis. 4 As other semiconductor nanostructures, the b-Ga 2 O 3 has received special attention for its improved luminescent properties due to quantum confinement effects.…”

Section: Introductionmentioning

confidence: 99%

CL study of blue and UV emissions in β-Ga2O3 nanowires grown by thermal evaporation of GaN

Guzmán-Navarro¹,

Herrera-Zaldívar²,

Valenzuela‐Benavides³

et al. 2011

Journal of Applied Physics

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We report a cathodoluminescence (CL) study of β-Ga2O3 nanowires grown by thermal evaporation of GaN on Si(100) and Au/Si(00) substrates. Condensation and subsequent oxidation of metallic Ga is suggested as the growth mechanism of β-Ga2O3 nanowires. The β-Ga2O3 nanowires grown on Si(100) show multiple bends or undulations, together with a strong UV emission at 3.31 eV and a weak blue emission centered at 2.8 eV as a band component. The β-Ga2O3 nanowires grown on Au/Si(100) substrates recorded a lower CL intensity of a well-defined blue emission of 2.8 eV. A thermal treatment on these samples produced an increase of the UV emission and quenching of the blue band. Thermal annealing of oxygen vacancies is proposed as the responsible mechanism for the observed behavior of these samples.

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Section: Introductionmentioning

confidence: 99%

CL study of blue and UV emissions in β-Ga2O3 nanowires grown by thermal evaporation of GaN

Guzmán-Navarro¹,

Herrera-Zaldívar²,

Valenzuela‐Benavides³

et al. 2011

Journal of Applied Physics

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“…[1][2][3][4][5] Recently, considerable effort has been devoted to the study of nanostructured ␤-Ga 2 O 3 because of the potential for applications in nanodevices. [6][7][8][9][10] In ambient conditions, monoclinic ␤-Ga 2 O 3 is the thermodynamically stable form and there are other four metastable structures: ␣-, ␥-, ␦-, and -Ga 2 O 3 .…”

Section: Introductionmentioning

confidence: 99%

High-pressure behavior of β-Ga2O3 nanocrystals

Wang

Chen

et al. 2010

Journal of Applied Physics

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Freestanding nanocrystalline ␤-Ga 2 O 3 particles with an average grain size of 14 nm prepared by chemical method was investigated by angle-dispersive synchrotron x-ray diffraction in diamond-anvil cell up to 64.9 GPa at ambient temperature. The evolution of x-ray diffraction patterns indicated that nanocrystalline monoclinic ␤-Ga 2 O 3 underwent a phase transition to rhombohedral ␣-Ga 2 O 3 . It was found that ␤-to ␣-Ga 2 O 3 transition began at about 13.6-16.4 GPa, and extended up to 39.2 GPa. At the highest pressure used, only ␣-Ga 2 O 3 was present, which remained after pressure release. A Birch-Murnaghan fit to the P-V data yielded a zero-pressure bulk modulus at fixed B 0 Ј=4: B 0 = 228͑9͒ GPa and B 0 = 333͑19͒ GPa for ␤-Ga 2 O 3 and ␣-Ga 2 O 3 phases, respectively. We compared our results with bulk ␤-Ga 2 O 3 , and concluded that the phase-transition pressure and bulk modulus of nanocrystalline ␤-Ga 2 O 3 are higher than those of bulk counterpart.

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“…-Ga 2 O 3 is chemically and thermally stable with a wide band-gap of 4.9 eV, thus has potential applications in optoelectronic devices and high temperature stable gas sensors (Ogita et al, 1999). So far, a variety of -Ga 2 O 3 nanostructures has been widely synthesized through chemical vapor deposition , thermal evaporation (Zhang et al, 1999) or catalytic assisted growth (Choi et al, 2009) using gallium as one of the starting materials.…”

Section: β-Ga 2 Omentioning

confidence: 99%