Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials 2012
DOI: 10.7567/ssdm.2012.a-6-4
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GaAs/AlAs multilayer cavity with Er-doped InAs quantum dots embedded in extremely thin strain-relaxed InGaAs barriers for ultrafast all-optical switches

Ken Morita1,
Hitoshi Ueyama2,
Yukinori Yasunaga3
et al.
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