GaAs/AlGaAs heterostructure nanowires studied by cathodoluminescence

Bolinsson, Jessica; Ek, Martin; Trägårdh, Johanna; Mergenthaler, Kilian; Jacobsson, Daniel; Pistol, Mats‐Erik; Samuelson, Lars; Gustafsson, Anders

doi:10.1007/s12274-014-0414-2

Cited by 34 publications

(44 citation statements)

References 63 publications

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“…3, there is only a single emission with larger intensity centered at 826.6 nm (1.501 eV) in the low-temperature PL spectrum of the GaAs nanowires which is grown under the larger V/III ratio (90). Compared the low-temperature PL spectra with the previous reports [28,[38][39][40][41][42][43], it is considered that the peak emission at 1.501 eV corresponds to the free exciton emission of ZB GaAs nanowires. It is indicated that the GaAs nanowires have a pure ZB structure, which is consistent with HRTEM results presented above.…”

Section: Resultsmentioning

confidence: 91%

Self-catalyzed molecular beam epitaxy growth and their optoelectronic properties of vertical GaAs nanowires on Si(111)

Zhang

Geng

Zha

et al. 2016

Materials Science in Semiconductor Processing

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Section: Resultsmentioning

confidence: 91%

Self-catalyzed molecular beam epitaxy growth and their optoelectronic properties of vertical GaAs nanowires on Si(111)

Zhang

Geng

Zha

et al. 2016

Materials Science in Semiconductor Processing

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“…However, previous studies have shown that high densities of stacking defects give emission at an energy of about 1.49 eV in wz-GaAs [24].…”

Section: Discussionmentioning

confidence: 89%

Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires

et al. 2014

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We have investigated a large set of individual wurtzite/zinc-blende GaAs heterojunction nanowires using transmission electron microscopy (TEM), photoluminescence (PL), and cathodoluminescence (CL). In several cases we have combined PL and TEM on the same wire. We find a fairly deep emission that shows a strong blueshift with increasing excitation power density. By using a variety of experiments we show that this emission is due to recombination across a heterojunction with a type II band alignment. The data give a valence band offset of about 100 meV, in excellent agreement with theoretical predictions. Spatially resolved CL data on heterojunction nanowires and PL data on pure wurtzite nanowires show that the band gap of wurtzite GaAs is very close to the band gap of zinc-blende GaAs.

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“…The PL spectra of the reference GaAs NWs are consistent with those previously reported in the literature. 18,[41][42][43][44][45][46][47][48][49] Within the pure ZB part (i.e. the ZB region of the wire with only a few twins), the PL emission is dominated by the free exciton (FX) transition at 1.515 eVsee Fig.…”

Section: Resultsmentioning

confidence: 99%

Strongly polarized quantum-dot-like light emitters embedded in GaAs/GaNAs core/shell nanowires

et al. 2016

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Recent developments in fabrication techniques and extensive investigations of the physical properties of III-V semiconductor nanowires (NWs), such as GaAs NWs, have demonstrated their potential for a multitude of advanced electronic and photonics applications. Alloying of GaAs with nitrogen can further enhance the performance and extend the device functionality via intentional defects and heterostructure engineering in GaNAs and GaAs/GaNAs coaxial NWs. In this work, it is shown that incorporation of nitrogen in GaAs NWs leads to formation of three-dimensional confining potentials caused by short-range fluctuations in the nitrogen composition, which are superimposed on long-range alloy disorder. The resulting localized states exhibit a quantum-dot like electronic structure, forming optically active states in the GaNAs shell. By directly correlating the structural and optical properties of individual NWs, it is also shown that formation of the localized states is efficient in pure zinc-blende wires and is further facilitated by structural polymorphism. The light emission from these localized states is found to be spectrally narrow (∼50-130 μeV) and is highly polarized (up to 100%) with the preferable polarization direction orthogonal to the NW axis, suggesting a preferential orientation of the localization potential. These properties of self-assembled nano-emitters embedded in the GaNAs-based nanowire structures may be attractive for potential optoelectronic applications.

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GaAs/AlGaAs heterostructure nanowires studied by cathodoluminescence

Cited by 34 publications

References 63 publications

Self-catalyzed molecular beam epitaxy growth and their optoelectronic properties of vertical GaAs nanowires on Si(111)

Self-catalyzed molecular beam epitaxy growth and their optoelectronic properties of vertical GaAs nanowires on Si(111)

Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires

Strongly polarized quantum-dot-like light emitters embedded in GaAs/GaNAs core/shell nanowires

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